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Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant He, Wei; Zhang, Lu; Chan, Daniel S. H.; Cho, BJ; Zhang, L; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625, 2009-06 |
High-Performance MIM Capacitors Using HfLaO-Based Dielectrics Zhang, Lu; He, Wei; Chan, Daniel S. H.; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.17 - 19, 2010-01 |
Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
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