Showing results 1 to 11 of 11
Atomic Layer Deposition 방법을 이용한 금속 게이트 전극 일함수 조정에 대한 연구 = Study on tuning effective work function of metal gate electrode using atomic layer depositionlink 임성묵; Lim, Sung-Mook; et al, 한국과학기술원, 2013 |
High-Performance and High-Endurance HfO2-Based Ferroelectric Field-Effect Transistor Memory with a Spherical Recess Channel Kim, Taeho; Hwang, Junghyeon; Kim, Giuk; Jung, Minhyun; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.15, no.5, 2021-05 |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors Kim SJ; Cho, Byung Jin; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07 |
MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2 Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09 |
PVD HfO2 for high-precision MIM capacitor applications Kim SJ; Cho, Byung Jin; Li MF; Yu XF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389, 2003-06 |
Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment Lee, Jae Jin; Shin, Yunsang; Choi, Juyun; Kim, Hyoungsub; Hyun, Sangjin; Choi, Siyoung; Cho, Byung Jin; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.439 - 441, 2012-11 |
Research on improvement of electrical properties of Ge pMOS devices using Vacuum Annealing and Ultrathin Hf layer with sub-1nm EOT = 진공열처리와 Hf박막을 이용한 1nm이하 EOT를 가지는 Ge pMOS구조에서의 전기적 특성 개선에 관한 연구link Chung, Won-Il; 정원일; et al, 한국과학기술원, 2014 |
Tensile-strained germanium CMOS integration on silicon Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12 |
The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications Kim, Taeho; Kim, Giuk; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Lee, Sangho; Shin, Hunbeom; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02 |
Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory Lee, Sangho; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10 |
Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jin, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09 |
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