Showing results 1 to 23 of 23
A Sub-20 nm Organic/Inorganic Hybrid Dielectric for Ultralow-Power Organic Thin-Film Transistor (OTFT) With Enhanced Operational Stability Choi, Junhwan; Lee, Chungyeol; Kang, Juyeon; Lee, Chang Hyeon; Lee, Seungmin; Oh, Jungyeop; Choi, Sung-Yool; et al, SMALL, v.18, no.39, 2022-09 |
Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films Sahu, BS; Srivastava, P; Agnihotri, OP; Lee, Hee Chul; Sekhar, BR; Mahapatra, S, THIN SOLID FILMS, v.446, pp.23 - 28, 2004-01 |
Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film Kim, Hyo Kyeom; Jung, Hyung-Suk; Jang, Jae Hyuck; Park, Jinho; Park, Tae Joo; Lee, Seok-Hee; Hwang, Cheol Seong, JOURNAL OF APPLIED PHYSICS, v.110, no.11, 2011-12 |
Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 |
Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2 Yeo, CC; Joo, MS; Cho, Byung Jin; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09 |
Enhanced performance in graphene RF transistors via advanced process integration Hong, Seul Ki; Oh, Joong Gun; Hwang, Wan Sik; Cho, Byung-Jin, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.4, 2017-04 |
Fast and slow transient charging of Oxide Semiconductor Transistors Kim, Taeho; Park, Sungho; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-09 |
Fast transient charging behavior of HfInZnO thin-film transistor Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08 |
Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor Park, Junghak; Woo, Hyunsuk; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.35, no.5, 2017-09 |
Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor Kim, Taeho; Choi, Rino; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206, 2017-02 |
Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics Yang, Sang Cheol; Choi, Junhwan; Jang, Byung Chul; Hong, Woonggi; Shim, Gi Woong; Yang, Sang Yoon; Im, Sung Gap; et al, ADVANCED ELECTRONIC MATERIALS, v.5, no.5, pp.1800688, 2019-05 |
Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08 |
Photo-Curable Sol-Gel Hybrid Film as a Dielectric Layer by a Thiol-ene Reaction in Air or N-2 for Organic Thin Film Transistors Kim, Joon-Soo; Lee, Seung-Won; Hwang, Young-Hwan; Kim, Yong-Ho; Yoo, Seung-Hyup; Bae, Byeong-Soo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.5, pp.G13 - G15, 2012-02 |
Process and material properties of HfLaO(x) prepared by atomic layer deposition He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08 |
Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 |
Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04 |
Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation Choi, Junhwan; Yoon, Jongsun; Kim, Min Ju; Pak, Kwanyong; Lee, Changhyeon; Lee, Haechang; Jeong, Kihoon; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29113 - 29123, 2019-07 |
Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jin, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04 |
Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; et al, NATURE MATERIALS, v.14, no.6, pp.628 - 635, 2015-06 |
The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 |
Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11 |
Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors Lee, Sung Won; Shin, Minkwan; Park, Jae Yoon; Kim, Bong Soo; Tu, Deyu; Jeon, Sanghun; Jeong, Unyong, SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880, 2015-05 |
Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics Kim, Min Ju; Pak, Kwanyong; Choi, Junhwan; Lee, Tae In; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung-Jin, ACS APPLIED MATERIALS & INTERFACES, v.11, no.47, pp.44513 - 44520, 2019-11 |
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