Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1151

Showing results 37 to 96 of 98

37
Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure

Kim, S; Yang, Kyounghoon, International Conference on Solid State Devices and Materials, pp.208 - 209, 2005

38
Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure

Kim,; 양경훈, Korean Conference on Semiconductors, pp.447 - 448, 2006

39
Experimental investigation on temperature dependence of InP RTD-based Digital/Analog MMICs

Lee, J; Choi, S; Yang, Kyounghoon, 2009 International Nanotech Symposiym & Exhibition in Korea, 2009

40
Fabrication and characterization of AlAs/InGaAs/InAs Resonant Tunneling Diodes

홍성철; 김형태; 최성순; 김석진; 송생섭; 양경훈; 서광석, Korean Conference On Semiconductors, pp.341 - 342, 2003-02-27

41
Fabrication and characterization of RTD-HBT inverter

Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I.; Chow, D.H.; et al, 17th IEEE Cornell Conference, pp.42 - 43, IEEE, 2000-08-07

42
Fabrication of Edge-Illuminated Refracting Facet Photodiodes with on-chip V-grooves

Lee, B; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.51 - 52, 2003

43
Fabrication of GaAs-based Heterosturcture-MOS RF Switch Devices Using an LPCEO Technology

Kim, S; 양경훈, Korean Conference on Semiconductors, pp.469 - 470, 2006

44
Fabrication of High fmax InP DHBTs Using a New Wet Etching Method

Jeong, Y; Song, Y; Choi, S; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.347 - 348, 2003

45
Fabrication of Near Infrared Planar Geiger-mode Avalanche Photodiodes using a Single Diffusion Process

이기원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02

46
Fabrication of sub-micron Y-gate InP MESFETs using crystallographically defined contact technology

Yoon, M; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.134 - 135, 2002

47
FPN Reduction in a Self-adaptive CMOS Image Sensor Using a Hard-reset Mode

Choi, J; Lee, J; Baek, I; Yang, Kyounghoon, Korean Conference on Semiconductors, Korean Conference on Semiconductors, 2011

48
GaAs 산화막 형성 기술을 이용한 새로운 GaAs MMIC MOS Varactor

김성연; 양경훈, 한국군사과학기술학회 2004년 종합학술대회 및 정기총회, pp.517 - 519, 한국군사과학기술학회, 2004

49
HBT 및 IC 설계 및 제작기술

양경훈, 무선통신용MMIC및 Module Workshop, pp.167 - 201, 1999

50
High performance mmW-band MMIC phase shifters using InP-based PIN diodes with a high-cutoff

Kim, M; Yang, JG; 양경훈, 2009 Spring Conference on Microwave and Wave Propagation, pp.103 - 103, 2009

51
High-speed digital/analog ICs using a Monolithic quantum-effect heterojunction device technology

Choi, S; Lee, B; Kim, T; 양경훈, Korean Conference on Semiconductors, pp.189 - 190, 2005

52
IC Application of Resonant Tunneling Diodes : RTD/HBT VCO

Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, International Symposium on Nanomanufacturing, pp.187 - 189, 2004

53
Implementation of a 4:1 multiplexing quantum-effect IC based on RTD circuit topology

Lee J.; Choi S.; Yang, Kyounghoon, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.211 - 213, IEEE, 2010-08-17

54
Implementation of a new functional digital IC for multiplexing operation based on RTDs

Choi, S.; Jeong, Y.; Lee, J.; Yang, Kyounghoon, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, pp.681 - 683, 2008-08-18

55
Improved DC and RF performance of high power AlGaN/GaN HEMTs with a novel inner field-plate

Lee K.; Ko K.; Lee S.; Yang, Kyounghoon, 2006 Asia-Pacific Microwave Conference, APMC, pp.1019 - 1022, 2006-12-12

56
InP Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

Yang, Kyounghoon; Munns, G. O.; East, J. R.; Haddad,G. I., IEEE Cornell Conf, pp.278 - 286, IEEE, 1997-08-04

57
InP HBT Technology based on new crystallographical etching characteristics

양경훈, ISRC Workshop, Compound Semiconductor Materials and Devices, pp.1 - 10, 2003

58
InP HBT technology for Micro/mm-Wave Applications

양경훈, 무선통신용MMIC및 Module Workshop 2000, pp.231 - 242, 2000

59
InP 기반 PIN MMIC 기술을 이용한 밀리미터파 대역레이더 시스템용 제어 회로 개발

Yang, JG; 양경훈, 군수용초고주파부품워크샵, pp.240 - 240, 2009

60
InP-BASE:D GILBERT CELL PHASE DETECTOR FOR GENERATION OF STABLE DENSE WAVELENGTH DIVISION MULTIPLEXING CHANNEL OFFSETS USING AN OPTICAL PHASE-LOCKED LOOP

Goetz, P. G.; Eisele, H.; Syao, K. C.; Yang, Kyounghoon; Bhattacharya, P., IEEE MTT-S Int. Microwave Symposium, pp.1245 - 1248, IEEE, 1998-06-07

61
InP-based device & IC technology for high frequency microelectronics

양경훈; Kim, T.; Yoon, M.; Kim,M.; Song, Y.; Lee, B., 2000 Fall Conference, Korea Institute of Military Science & technology, pp.181 - 186, 2000

62
InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I., IEEE Int. Conf. on InP and Related Material, pp.419 - 422, IEEE, 1999-05-16

63
InP-based OEIC Photoreceivers using Shared Layer Integration Technology of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes

Lee, B; Song,Y; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.182 - 183, 2003-09-16

64
K/Ka/Q-band 4-bit Digital Attenuator using a T-type Resistive Network

Yang, JG; 양경훈, Korean Conference on Semiconductors, pp.552 - 553, 2010

65
Ka-band 4-bit Digital MMIC Phase Shifter with Low-Insertion Loss Characteristics

Yang, Kyounghoon, Global Symposium on Millimeter Waves, Global Symposium on Millimeter Waves, 2010

66
Ku-band Compact Multi-layer Monolithic Microwave Digital Attenuator using InP/InGaAs PIN Diodes

Yang, Kyounghoon; Eom, H; Yang, JG; Choi, S, Int. Conf. on Solid State Devices and Materials, pp.304 - 305, 2007

67
Ku-band differential RTD/HBT VCO with ultra low DC-power Consumption

Choi, S; Jeong, Y; 양경훈, Korean Conference on Semiconductors, pp.455 - 456, 2006

68
Ku-band Multi-layer 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes

Eom, H; Yang, JG; Choi, S; 양경훈, Korean Conference on Semiconductors, pp.918 - 919, 2008

69
Large bandwidth InP-based monolithically integrated PIN-HBT photoreceivers for optical communications

A. L. Gutierrez-Aitken; Bhattacharya, P.; Cowles, J.; Yang, Kyounghoon; Haddad, G. I., Conference on Manufacturing Process Development in Photonics, pp.197 - 203, 1994-11-01

70
Low-Power K-band Second Harmonic Balanced VCO IC Using InP Based RTDs

Jeong,Y; Choi, S; Yang, Kyounghoon, IEEE International Conference on InP and Related Materials, pp.355 - 357, IEEE, 2010-05

71
Low-Power/High-Speed Digital/Analog ICs using an RTD-based MMIC Technology

Yang, Kyounghoon, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, pp.65 - 68, 2007

72
Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoon; Bhattachrya, M.; Wang, X.; Zhang, X.; East, J. R.; Mazumder, P.; et al, IEEE Int. Conf. on InP and Related Materials, pp.419 - 422, IEEE, 1998-05-11

73
Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance photoreceivers

Rieh, J. S.; Qasaimeh, O.; Klotzkin, D.; Lu, L. H.; Yang, Kyounghoon; Katehi, L. P. B.; Bhattacharya, P.; et al, IEEE Cornell Conf, pp.322 - 331, IEEE, 1997-08-04

74
New High-Sensitivity Logarithmic Response CMOS Active Pixel Sensor using a GIDL Mechanism

백인규; 이지원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02

75
Noise Analysis and Modeling of Microwave AlGaN/GaN HEMTs Considering Trap Effects

Hwang, M; Yang, Kyounghoon, International Joint Conference of MINT-MIS 2005/TSMMW 2005, pp.136 - 139, 2005

76
Novel Differential-Mode RTD/HBT MOBILE-based D-Flip Flop IC

Jeong,Y; Kim, T; Yang, Kyounghoon, International Conference on Solid State Devices and Materials, pp.222 - 223, 2005

77
Numerical study of the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach

Yang, Kyounghoon; East, J. R.; Haddad, G. I., Int. Semicond. Device Research Symp., pp.551 - 554, 1993-11-01

78
Observation of Thermal Reliability of BCB Passivated InAlAs/InGaAs HEMTs

Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.122 - 123, 2003-09-16

79
On the functional failure and switching time analysis of the MOBILE circuit

Li, S. R.; Mazumder, P.; Yang, Kyounghoon, IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005, pp.2531 - 2534, IEEE, 2005-05-23

80
Passivation Study for AlGaN/GaN HEMTs Using Photosensitive BCB and SiN

Kim, S; Yang, Kyounghoon, International Joint Conference of MINT-MIS 2005/TSMMW 2005, pp.307 - 310, 2005

81
Performance modeling of resonant tunneling based RAMS

Zhang, H.; Mazumder, P.; Ding, L.; Yang, Kyounghoon, 2003 IEEE International Symposium on Circuits and Systems, v.4, pp.900 - 903, IEEE, 2003-05-25

82
Performance of OFDM systems with adaptive nonlinear amplifiers

Jong, J. H.; Yang, Kyounghoon; Stark,W. E.; Haddad, G. I., 1999 IEEE Military Communications Conference, pp.1110 - 1114, IEEE, 1999-10-31

83
Power optimization of OFDM systems with DC bias controlled nonlinear amplifiers

Jong, J. H.; Yang, Kyounghoon; Stark, W.E.; Haddad G.I., IEEE VTS 50th Vehicular Technology Conference, VTC 1999-Fall, v.50, no.1, pp.268 - 272, IEEE, 1999-09-19

84
Practical Application of Quantum-effect Device Technology

Yang, Kyounghoon, Nanotech Symposium & Exhibition in Korea, 2008

85
Quantum-Effect RTD-Based Microwave Amplifier for ISM-band Low-Power Applications

Lee, Jong Won; Lee, Jooseok; Kim, Maengkyu; Yang, Kyounghoon, 7th Global Symposium on Millimeter-Waves 2014, KIEES, 2014-05-22

86
Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design

Song, Y.; Yang, Kyounghoon, 14th Indium Phosphide and Related Materials Conference, pp.165 - 168, IEEE, 2002-05-12

87
Reliability of BCB Passivated InAlAs/InGaAs HEMTs Under Thermal Stress

Kim, D; Yoon, M; Kim, T; Yang, Kyounghoon, IEEE, International Symposium on Compound Semiconductors, pp.231 - 232, IEEE, 2003

88
Reset Level Boosting in Self-Adaptive APS for Wide Output Voltage Swing at Low Voltage Operation

Lee, J; Cho, C; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.280 - 281, 2008

89
Reset level Boosting in Self-adaptive CMOS Active Pixel Sensor for a Wide Output Voltage Swing at Low Voltage Operation

Lee, J; Cho, Ch; Baek, I; 양경훈, Korean Conference on Semiconductors, pp.54 - 55, 2009

90
Resonant tunneling diode based QMOS edge triggered flip-flop design

Zhang, H.; Mazumder, P.; Yang, Kyounghoon, 2004 IEEE International Symposium on Cirquits and Systems - Proceedings, v.3, pp.705 - 708, IEEE, 2004-05-23

91
SPICE-Based DC and Microwave Characterization of InAlAs/InGaAs HBT’s Used for Large-Bandwidth Integrated Transimpedance Amplifiers

Yang, Kyounghoon; Gutierrez-Aitken, A. L.; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.448 - 451, IEEE, 1995-05

92
Suppression of Random Offset Deviation in a Rail-to-Rail Buffer Amplifier for Display Driver ICs Under Transistor Threshold Mismatch

Song,Y; 양경훈, Korean Conference on Semiconductors, pp.77 - 78, 2006

93
The validity of reciprocity and the Ebers-Moll model in abrupt heterojunction bipolar transistors

J. C. Cowles,; Yang, Kyounghoon; A. Guiterrez-Aitken; Munns, G. O.; Chen, W. L.; Haddad, G. I.; Bhattacharya, P. K., Int. Semicond. Device Research Symp., pp.787 - 790, 1993

94
Theoretical and experimental study of the InP/InGaAs PIN diode for millimeter-wave MMIC applications

Yang, J.G.; Choi, S.; Jeong, Y.; Yang, Kyounghoon, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, pp.133 - 136, 2007-05-14

95
Theoretical and experimental study on thermal characteristics of InP/InGaAs single heterojunction bipolar transistors

Kim, Taeho; Song,Y; Park, HM; Kim, M; Hong, Songcheol; Yang, Kyounghoon, 2001 Int. Conf. On Solid State Devices and Materials, pp.70 - 71, 2001

96
Wireless RF Emission of Low-power Quantum Tunneling-diode Wave Generator Integrated with a microstructure Antenna

Kim, Maengkyu; Lee, Jooseok; Baek, Inkyu; Lee, Jongwon; Park, Jaehong; Yang, Kyounghoon, The 11th Nano Korea 2012, Nano Korea, 2012-08

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