Browse "School of Electrical Engineering(전기및전자공학부)" by Author Park, Young-Min

Showing results 1 to 6 of 6

1
Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device

Park, Jong-Kyung; Park, Young-Min; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS EXPRESS, v.3, no.9, 2010-08

2
Development of flash memory using high-k dielectrics by the improvement of charge trap layer and blocking oxide layer and its theory = 고유전막을 이용한 전하포획막과 차단산화막의 향상을 이용한 플래쉬 메모리 개발 및 그 이론link

Park, Young-Min; 박영민; et al, 한국과학기술원, 2011

3
Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device

Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jinresearcher, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05

4
Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device

Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Heeresearcher; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10

5
Mechanism of Date Retention Improvement by High Temperature Annealing of Al(2)O(3) Blocking Layer in Flash Memory Device

Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Heeresearcher; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4, 2011-04

6
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices

Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02

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