Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1151

Showing results 1 to 60 of 98

1
14 GHz InP-RTD based MMIC VCOs with Low DC power consumption

Choi, S.; Jeong, Y; Yang, Kyounghoon, IEEE 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, pp.439 - 441, IEEE, 2006

2
16 GHz bandwidth InAlAs/InGaAs monolithically integrated PIN-HBT photoreceiver

A. L. Gutierrez-Aitken; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., Europ. Conf. on Optical Comm, pp.661 - 664, 1995

3
16-channel monolithically integrated InP-based p-i-n/HBT photoreceiver array with 11-GHz channel bandwidth and low crosstalk

Syao, K. C.; Yang, Kyounghoon; A. L. Gutierrez-Aitken; Zhang, X.; Haddad, G. I.; Bhattacharya, P., 1997 Optical Fiber Comm. Conf. (OFC'97), pp.15 - 16, 1997-02-16

4
240GHz fmax InP/InGaAs Single HBT fabrication and modeling

Song, Y; Kim, T; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.21 - 22, 2002

5
5-Gb/s On-Off Keying Low Power K-Band MMIC Oscillator Based on an RTD/HBT Technology

Lee, Ki Won; Lee, Jooseok; Park, Jaehong; Lee, Jong Won; Kim, Maengkyu; Yang, Kyounghoon, 7th Global Symposium on Millimeter-Waves 2014, KIEES, 2014-05-21

6
5-GHz VCO with a wide tuning range using an InP-based RTD/HBT MMIC technology

Choi, SK; Kim, T; Lee, B; Yang, Kyounghoon, IEEE, European Gallium Arsenide and other Compound Semiconductors Application Symposium 2004, pp.207 - 210, IEE, 2004-10-11

7
9 GHz Bandwidth InP-Based Integrated PIN-HBT Photoreceiver

Gutierrez-Aitken, A. L.; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.357 - 360, IEEE, 1995-05

8
A 40Gb/s Low DC-power 2:1 Multiplexer IC using a Monolithic quantum-effect device technology

Choi, S; Jeong,Y; Lee, J; 양경훈, Korean Conference on Semiconductors, pp.26 - 27, 2009

9
A 45 mW RTD/HBT MOBILE D-Flip Flop IC Operating up to 26 Gb/s

Kim, T; Jeong,Y; 양경훈, Korean Conference on Semiconductors, pp.703 - 704, 2006

10
A 6-30 GHz compact 3-bit digital attenuator MMIC using InP/InGaAs PEN diodes

Eom, H.; Han, S.; Yang, Kyounghoon, 2008 Global Symposium on Millimeter Waves, GSMM 2008, pp.101 - 103, 2008-04-21

11
A Broadband Multi-layer SPDT Switch using Low-loss High-isolation InP/InGaAs PIN Diodes

Eom, H; Yang, JG; Choi,S; Jeong, Y; Yang, Kyounghoon, MINT-MIS, pp.183 - 186, 2007

12
A Ku-band High Isolation InP-based SPST PIN Switch using a 3-D MMIC technology

Yang, J; Eom, H; Jeong, Y; Choi, S; Yang, Kyounghoon, Korean Conference on Semiconductors, pp.89 - 90, 2007

13
A Low Power RTD/HBT Non-return-to-Zero (NRZ) D-type Flip Flop ICs using a CML-type MOBILE Scheme

Kim, T; Lee, B; Choi, S; 양경훈, Korean Conference on Semiconductors, pp.193 - 194, 2005

14
A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6 GHz

Yang, Kyounghoon; A. L. Gutierrez-Aitken; Zhang, X.; Bhattacharya, P.; Haddad, G. I., International Symposium on Compound Semiconductors, pp.1097 - 1102, 1995

15
A new CML-type RTD/HBT Non-inverted/Inverted Monostable-Bistable transition Logic Element (MOBILE) IC

Kim, T; Choi, S; Lee, B; Yang, Kyounghoon, 2004 Int. Conf. On Solid State Devices and Materials, pp.660 - 661, 2004

16
A New Submicron Gate Patterning Technique for InP MESFETs Using Crystallographical Etching Characteristics

Yoon, M; Yang, Kyounghoon, MINT Millimeter-wave International Symposium, pp.25 - 28, 2003

17
A Novel Low DC Power Multiplexer based on the monolithic RTD HBT Technology

Choi, S; Jeong, Y; Lee, J; Yang, Kyounghoon, Korean Conference on Semiconductors, pp.331 - 332, 2008

18
A Novel Self-Adaptive Photosensing Pixel Structure With Tunable Sensitivity For High Performance CMOS Image Sensors

Lee, S; Yang, Kyounghoon, 2006 5th IEEE Conference on Sensors, pp.299 - 302, 2006-10-22

19
A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays

Syao, K. C.; A. L. Gutierrez-Aitken; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Electron Devices Meeting (IEDM'96), pp.649 - 652, IEEE, 1996-12-08

20
A Ring oscillator using an RTD-HBT heterostructure

Lin, C. H.; Yang, Kyounghoon; East, J. R.; Haddad, G. I.; Chow, D.H.; Warren, L. D.; Dunlap, H. L.; et al, Int. Conf. On Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000), pp.120 - 121, 2000

21
An InGaAs PIN-diode based with H-I characteristics broadband traveling-wave switch

Yang, JG; Kim, M; Yang, Kyounghoon, IEEE International Conference on InP and Related Materials, pp.207 - 209, IEEE, 2009

22
An InP-based RTD Triple-push Oscillator Operating At Over 1 THz

Lee, Joo Seok; Kim, Maengkyu; Yang, Kyoung Hoon, IEEE International Conference on InP and Related Materials, IEEE, 2015-07-01

23
Automatic control of efficiency and linearity in power amplifiers for low-power wireless communications

Yang, Kyounghoon; East, J. R.; Haddad, G. I., Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.113 - 118, 1998-09

24
Calculation of Random Offset Deviation in Rail-to-Rail Buffer Using Transistor Threshold Mismatch for Display Driver ICs

Song, Y; 양경훈, Korean Conference on Semiconductors, pp.261 - 262, 2005

25
Class A dc bias controlled amplifiers for OFDM systems

Jong, J. H.; Yang, Kyounghoon; Stark, W. E.; Haddad, G. I., 1999 IEEE Topical Workshop on Power Amps. for Wireless Comm, IEEE, 1999-09-13

26
Compact InP/InGaAs PIN SPDT/SP3T Switches using BCB-based 3-D MMIC Technology

Yang, JG; Choi, S; Eom, H; 양경훈, Korean Conference on Semiconductors, pp.317 - 318, 2008

27
Design and Fabrication of a Novel Inner Field-plate AlGaN/GaN-HEMT Structure for High Power Applications

Lee,; Lee, S; Yang, Kyounghoon, MINT-MIS, pp.205 - 208, 2007

28
Design and implementation of a Ka-band 4-bit MMIC phase shifter using an InP-based PIN diode

Yang, JG; Kim, M; 양경훈, 감시정찰정보학술대회, pp.114 - 114, 2009

29
Design and Implementation of a Ku-band 5bit MMIC Phase Shifter using InGaAs PIN Diodes

Yang, JG; 양경훈, Korean Conference on Semiconductors, pp.22 - 23, 2009

30
Design and simulation of 20 Gbps-level MOBILE based on an RTD-HEMT Technology

Kim,T; 양경훈, Korean Conference On Semiconductors, pp.469 - 470, 2003

31
Design of a New Pinned Photodiode Structure for High Sensitivity CMOS Image Sensors

Lee, S; 양경훈, Korean Conference On Semiconductors, pp.69 - 70, 2006

32
Design of multi-valued QMOS pre-decoder

Zhang, H; Uemura, T.; Mazumder, P.; Yang, Kyounghoon, IEEE Conference on Nanotechnology, pp.614 - 617, IEEE, 2004

33
Design optimization of high-frequency InP-HBT power cells based on thermal simulation

Song, Y; Kim, T; Yang, Kyounghoon, MINT Millimeter-wave International Symposium, pp.75 - 81, 2001-02-15

34
Development of Self-Aligned RTDs using a SiNx Sidewall Process

Lee, H; Lee, J; 양경훈, Korean Conference on Semiconductors, pp.564 - 565, 2010

35
Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE

Yang, Kyounghoon; Muuns, G. O.; Wang, X.; Haddad, G. I., IEEE Int. Conf. on InP and Related Materials, pp.645 - 648, IEEE, 1997-05-11

36
Dynamic Range Enhancement of a Self-adaptive APS with Pulsed Photogate Bias

Cho, C; Lee, J; Baek, I; 양경훈, Korean Conference on Semiconductors, pp.606 - 607, Korean Conference on Semiconductors, 2010

37
Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure

Kim, S; Yang, Kyounghoon, International Conference on Solid State Devices and Materials, pp.208 - 209, 2005

38
Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure

Kim,; 양경훈, Korean Conference on Semiconductors, pp.447 - 448, 2006

39
Experimental investigation on temperature dependence of InP RTD-based Digital/Analog MMICs

Lee, J; Choi, S; Yang, Kyounghoon, 2009 International Nanotech Symposiym & Exhibition in Korea, 2009

40
Fabrication and characterization of AlAs/InGaAs/InAs Resonant Tunneling Diodes

홍성철; 김형태; 최성순; 김석진; 송생섭; 양경훈; 서광석, Korean Conference On Semiconductors, pp.341 - 342, 2003-02-27

41
Fabrication and characterization of RTD-HBT inverter

Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I.; Chow, D.H.; et al, 17th IEEE Cornell Conference, pp.42 - 43, IEEE, 2000-08-07

42
Fabrication of Edge-Illuminated Refracting Facet Photodiodes with on-chip V-grooves

Lee, B; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.51 - 52, 2003

43
Fabrication of GaAs-based Heterosturcture-MOS RF Switch Devices Using an LPCEO Technology

Kim, S; 양경훈, Korean Conference on Semiconductors, pp.469 - 470, 2006

44
Fabrication of High fmax InP DHBTs Using a New Wet Etching Method

Jeong, Y; Song, Y; Choi, S; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.347 - 348, 2003

45
Fabrication of Near Infrared Planar Geiger-mode Avalanche Photodiodes using a Single Diffusion Process

이기원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02

46
Fabrication of sub-micron Y-gate InP MESFETs using crystallographically defined contact technology

Yoon, M; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.134 - 135, 2002

47
FPN Reduction in a Self-adaptive CMOS Image Sensor Using a Hard-reset Mode

Choi, J; Lee, J; Baek, I; Yang, Kyounghoon, Korean Conference on Semiconductors, Korean Conference on Semiconductors, 2011

48
GaAs 산화막 형성 기술을 이용한 새로운 GaAs MMIC MOS Varactor

김성연; 양경훈, 한국군사과학기술학회 2004년 종합학술대회 및 정기총회, pp.517 - 519, 한국군사과학기술학회, 2004

49
HBT 및 IC 설계 및 제작기술

양경훈, 무선통신용MMIC및 Module Workshop, pp.167 - 201, 1999

50
High performance mmW-band MMIC phase shifters using InP-based PIN diodes with a high-cutoff

Kim, M; Yang, JG; 양경훈, 2009 Spring Conference on Microwave and Wave Propagation, pp.103 - 103, 2009

51
High-speed digital/analog ICs using a Monolithic quantum-effect heterojunction device technology

Choi, S; Lee, B; Kim, T; 양경훈, Korean Conference on Semiconductors, pp.189 - 190, 2005

52
IC Application of Resonant Tunneling Diodes : RTD/HBT VCO

Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, International Symposium on Nanomanufacturing, pp.187 - 189, 2004

53
Implementation of a 4:1 multiplexing quantum-effect IC based on RTD circuit topology

Lee J.; Choi S.; Yang, Kyounghoon, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.211 - 213, IEEE, 2010-08-17

54
Implementation of a new functional digital IC for multiplexing operation based on RTDs

Choi, S.; Jeong, Y.; Lee, J.; Yang, Kyounghoon, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, pp.681 - 683, 2008-08-18

55
Improved DC and RF performance of high power AlGaN/GaN HEMTs with a novel inner field-plate

Lee K.; Ko K.; Lee S.; Yang, Kyounghoon, 2006 Asia-Pacific Microwave Conference, APMC, pp.1019 - 1022, 2006-12-12

56
InP Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

Yang, Kyounghoon; Munns, G. O.; East, J. R.; Haddad,G. I., IEEE Cornell Conf, pp.278 - 286, IEEE, 1997-08-04

57
InP HBT Technology based on new crystallographical etching characteristics

양경훈, ISRC Workshop, Compound Semiconductor Materials and Devices, pp.1 - 10, 2003

58
InP HBT technology for Micro/mm-Wave Applications

양경훈, 무선통신용MMIC및 Module Workshop 2000, pp.231 - 242, 2000

59
InP 기반 PIN MMIC 기술을 이용한 밀리미터파 대역레이더 시스템용 제어 회로 개발

Yang, JG; 양경훈, 군수용초고주파부품워크샵, pp.240 - 240, 2009

60
InP-BASE:D GILBERT CELL PHASE DETECTOR FOR GENERATION OF STABLE DENSE WAVELENGTH DIVISION MULTIPLEXING CHANNEL OFFSETS USING AN OPTICAL PHASE-LOCKED LOOP

Goetz, P. G.; Eisele, H.; Syao, K. C.; Yang, Kyounghoon; Bhattacharya, P., IEEE MTT-S Int. Microwave Symposium, pp.1245 - 1248, IEEE, 1998-06-07

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