Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1151

Showing results 1 to 60 of 134

1

14 GHz InP-RTD based MMIC VCOs with Low DC power consumption

Choi, S.; Jeong, Y; Yang, Kyounghoonresearcher, IEEE 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, pp.439 - 441, IEEE, 2006

2

16 GHz bandwidth InAlAs/InGaAs monolithically integrated PIN-HBT photoreceiver

A. L. Gutierrez-Aitken; Yang, Kyounghoonresearcher; Zhang, X.; Haddad, G. I.; Bhattacharya, P., Europ. Conf. on Optical Comm, pp.661 - 664, 1995

3

16-channel monolithically integrated InP-based p-i-n/HBT photoreceiver array with 11-GHz channel bandwidth and low crosstalk

Syao, K. C.; Yang, Kyounghoonresearcher; A. L. Gutierrez-Aitken; Zhang, X.; Haddad, G. I.; Bhattacharya, P., 1997 Optical Fiber Comm. Conf. (OFC'97), pp.15 - 16, 1997-02-16

4

2-38 GHz broadband compact InGaAs PIN switches using a 3-D MMIC technology

Yang, J.G.; Eom, H.; Choi, S.; Yang, Kyounghoonresearcher, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, pp.542 - 545, IEEE, 2007-05-14

5

240GHz fmax InP/InGaAs Single HBT fabrication and modeling

Song, Y; Kim, T; Yoon, M; 양경훈researcher, Korean Conference On Semiconductors, pp.21 - 22, 2002

6

5-Gb/s On-Off Keying Low Power K-Band MMIC Oscillator Based on an RTD/HBT Technology

Lee, Ki Won; Lee, Jooseok; Park, Jaehong; Lee, Jong Won; Kim, Maengkyu; Yang, Kyounghoonresearcher, 7th Global Symposium on Millimeter-Waves 2014, KIEES, 2014-05-21

7

5-GHz VCO with a wide tuning range using an InP-based RTD/HBT MMIC technology

Choi, SK; Kim, T; Lee, B; Yang, Kyounghoonresearcher, IEEE, European Gallium Arsenide and other Compound Semiconductors Application Symposium 2004, pp.207 - 210, IEE, 2004-10-11

8

9 GHz Bandwidth InP-Based Integrated PIN-HBT Photoreceiver

Gutierrez-Aitken, A. L.; Yang, Kyounghoonresearcher; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.357 - 360, IEEE, 1995-05

9

A 1.3 pJ/bit Energy-Efficient Ultra-Low Power On-off mode Oscillator Using an InP-based Quantum-effect Tunneling Device

Lee, Jooseok; Lee, Jongwon; Park, Jaehong; Kim, Maengkyu; Yang, Kyounghoonresearcher, IEEE International Conference on InP and Related Materials, IEEE, 2012-08

10

A 40Gb/s Low DC-power 2:1 Multiplexer IC using a Monolithic quantum-effect device technology

Choi, S; Jeong,Y; Lee, J; 양경훈researcher, Korean Conference on Semiconductors, pp.26 - 27, 2009

11

A 45 mW RTD/HBT MOBILE D-Flip Flop IC Operating up to 26 Gb/s

Kim, T; Jeong,Y; 양경훈researcher, Korean Conference on Semiconductors, pp.703 - 704, 2006

12

A 45 mW RTD/HBT mobile D-flip flop IC operating up to 32 Gb/s

Kim, T.; Jeong, Y.; Yang, Kyounghoonresearcher, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, pp.348 - 351, IEEE, 2006-05-07

13

A 6-20 GHz compact multi-bit digital attenuator using InP/InGaAs PIN diodes

Eom, H.; Yang, Kyounghoonresearcher, 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008, 2008-05-25

14

A 6-30 GHz compact 3-bit digital attenuator MMIC using InP/InGaAs PEN diodes

Eom, H.; Han, S.; Yang, Kyounghoonresearcher, 2008 Global Symposium on Millimeter Waves, GSMM 2008, pp.101 - 103, 2008-04-21

15

A Broadband Multi-layer SPDT Switch using Low-loss High-isolation InP/InGaAs PIN Diodes

Eom, H; Yang, JG; Choi,S; Jeong, Y; Yang, Kyounghoonresearcher, MINT-MIS, pp.183 - 186, 2007

16

A Compact High-Speed RTD-based Reconfigurable Logic Gate

Lee, J; Lee, J; Yang, Kyounghoonresearcher, IEEE International Conference On InP and Related Materials, IEEE, 2011-05

17

A High Efficiency RTD-based Sub-THz Differential Oscillator Pair for a Spatial Power Combining Array

Kim, Maengkyu; Yang, Kyoung-Hoonresearcher, IEEE International Conference on InP and Related Materials, IEEE, 2016-06-29

18

A Ku-band High Isolation InP-based SPST PIN Switch using a 3-D MMIC technology

Yang, J; Eom, H; Jeong, Y; Choi, S; Yang, Kyounghoonresearcher, Korean Conference on Semiconductors, pp.89 - 90, 2007

19

A Ku-band InP-based RTD MMIC VCO with very low DC power consumption

Choi, S.; Jeong, Y.; Yang, Kyounghoonresearcher, 2005 International Conference on Indium Phosphide and Related Materials, v.2005, pp.263 - 266, IEEE, 2005-05-08

20

A Low Dark Current Planar-type InGaAs Guard-ring PIN Photodiode Using an ALD-Al2O3 Passivation for Short-wave Infrared Imaging Applications

김영준; 노인섭; 노형준; Park, Jaehong; Yang, Kyoung-Hoonresearcher, IEEE International Conference on InP and Related Materials, IEEE, 2016-06-29

21

A low DC-power multiplexer IC using an InP-based CML-mOBILE RTD/HBT technology

Choi, S.; Lee, J.; Jeong, Y.; Yang, Kyounghoonresearcher, 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008, 2008-05-25

22

A Low Power RTD/HBT Non-return-to-Zero (NRZ) D-type Flip Flop ICs using a CML-type MOBILE Scheme

Kim, T; Lee, B; Choi, S; 양경훈researcher, Korean Conference on Semiconductors, pp.193 - 194, 2005

23

A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6 GHz

Yang, Kyounghoonresearcher; A. L. Gutierrez-Aitken; Zhang, X.; Bhattacharya, P.; Haddad, G. I., International Symposium on Compound Semiconductors, pp.1097 - 1102, 1995

24

A new CML-type RTD/HBT Non-inverted/Inverted Monostable-Bistable transition Logic Element (MOBILE) IC

Kim, T; Choi, S; Lee, B; Yang, Kyounghoonresearcher, 2004 Int. Conf. On Solid State Devices and Materials, pp.660 - 661, 2004

25

A New Compact 3-D Hybrid Coupler Using Multi-Layer Microstrip Lines at 15 GHz

Jung, G.Y.; Jeong, Y; Choi, S; Yang, Kyounghoonresearcher, 36th European Microwave Conference, EuMC 2006, pp.25 - 28, 2006-09-10

26

A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects

Kim, T.; Yang, Kyounghoonresearcher, IEEE MTT-S International Microwave Symposium Digest, v.3, pp.2141 - 2144, IEEE, 2002-06-02

27

A new low-power RTD-based 4:1 multiplexer IC using an InP RTD/HBT MMIC technoligy

Lee J.; Choi S.; Yang, Kyounghoonresearcher, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, pp.352 - 354, IPRM 2010, 2010-05-31

28

A New Submicron Gate Patterning Technique for InP MESFETs Using Crystallographical Etching Characteristics

Yoon, M; Yang, Kyounghoonresearcher, MINT Millimeter-wave International Symposium, pp.25 - 28, 2003

29

A Novel Deep Guard-ring InGaAs PIN Photodiode Structure Reducing a Crosstalk in SWIR Imaging Detection

노인섭; 노형준; 김영준; Lee, Ki Won; Yang, Kyoung-Hoonresearcher, IEEE International Conference on InP and Related Materials, IEEE, 2016-06-29

30

A Novel Low DC Power Multiplexer based on the monolithic RTD HBT Technology

Choi, S; Jeong, Y; Lee, J; Yang, Kyounghoonresearcher, Korean Conference on Semiconductors, pp.331 - 332, 2008

31

A Novel Self-Adaptive Photosensing Pixel Structure With Tunable Sensitivity For High Performance CMOS Image Sensors

Lee, S; Yang, Kyounghoonresearcher, 2006 5th IEEE Conference on Sensors, pp.299 - 302, 2006-10-22

32

A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays

Syao, K. C.; A. L. Gutierrez-Aitken; Yang, Kyounghoonresearcher; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Electron Devices Meeting (IEDM'96), pp.649 - 652, IEEE, 1996-12-08

33

A Ring oscillator using an RTD-HBT heterostructure

Lin, C. H.; Yang, Kyounghoonresearcher; East, J. R.; Haddad, G. I.; Chow, D.H.; Warren, L. D.; Dunlap, H. L.; et al, Int. Conf. On Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000), pp.120 - 121, 2000

34

A Sub-mW D-band 2nd Harmonic Oscillator Using InP-based Quantum-effect Tunneling Devices

Lee, Jooseok; Kim, Maengkyu; Lee, Jong Won; Yang, Kyounghoonresearcher, IEEE International Conference on InP and Related Materials, IEEE, 2014-05-12

35

A W-Band InGaAs PIN-MMIC Digital Phase-Shifter Using the Switched Transmission-Line Structure

Yang, Jungil; Lee, Jooseok; Yang, Kyounghoonresearcher, IEEE International Conference on InP and Related Materials, IEEE, 2012-08

36

An InGaAs PIN-diode based broadband traveling-wave switch with high- Isolation characteristics

Yang J.G.; Kim M.; Yang, Kyounghoonresearcher, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, pp.207 - 209, IEEE, 2009-05-10

37

An InGaAs PIN-diode based with H-I characteristics broadband traveling-wave switch

Yang, JG; Kim, M; Yang, Kyounghoonresearcher, IEEE International Conference on InP and Related Materials, pp.207 - 209, IEEE, 2009

38

An InP-based RTD Triple-push Oscillator Operating At Over 1 THz

Lee, Joo Seok; Kim, Maengkyu; Yang, Kyoung Hoonresearcher, IEEE International Conference on InP and Related Materials, IEEE, 2015-07-01

39

Automatic control of efficiency and linearity in power amplifiers for low-power wireless communications

Yang, Kyounghoonresearcher; East, J. R.; Haddad, G. I., Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.113 - 118, 1998-09

40

Calculation of Random Offset Deviation in Rail-to-Rail Buffer Using Transistor Threshold Mismatch for Display Driver ICs

Song, Y; 양경훈researcher, Korean Conference on Semiconductors, pp.261 - 262, 2005

41

Class A dc bias controlled amplifiers for OFDM systems

Jong, J. H.; Yang, Kyounghoonresearcher; Stark, W. E.; Haddad, G. I., 1999 IEEE Topical Workshop on Power Amps. for Wireless Comm, IEEE, 1999-09-13

42

Compact InP/InGaAs PIN SPDT/SP3T Switches using BCB-based 3-D MMIC Technology

Yang, JG; Choi, S; Eom, H; 양경훈researcher, Korean Conference on Semiconductors, pp.317 - 318, 2008

43

Design and Fabrication of a Novel Inner Field-plate AlGaN/GaN-HEMT Structure for High Power Applications

Lee,; Lee, S; Yang, Kyounghoonresearcher, MINT-MIS, pp.205 - 208, 2007

44

Design and implementation of a Ka-band 4-bit MMIC phase shifter using an InP-based PIN diode

Yang, JG; Kim, M; 양경훈researcher, 감시정찰정보학술대회, pp.114 - 114, 2009

45

Design and Implementation of a Ku-band 5bit MMIC Phase Shifter using InGaAs PIN Diodes

Yang, JG; 양경훈researcher, Korean Conference on Semiconductors, pp.22 - 23, 2009

46

Design and simulation of 20 Gbps-level MOBILE based on an RTD-HEMT Technology

Kim,T; 양경훈researcher, Korean Conference On Semiconductors, pp.469 - 470, 2003

47

Design of a New Pinned Photodiode Structure for High Sensitivity CMOS Image Sensors

Lee, S; 양경훈researcher, Korean Conference On Semiconductors, pp.69 - 70, 2006

48

Design of multi-valued QMOS pre-decoder

Zhang, H; Uemura, T.; Mazumder, P.; Yang, Kyounghoonresearcher, IEEE Conference on Nanotechnology, pp.614 - 617, IEEE, 2004

49

Design optimization of high-frequency InP-HBT power cells based on thermal simulation

Song, Y; Kim, T; Yang, Kyounghoonresearcher, MINT Millimeter-wave International Symposium, pp.75 - 81, 2001-02-15

50

Development of Self-Aligned RTDs using a SiNx Sidewall Process

Lee, H; Lee, J; 양경훈researcher, Korean Conference on Semiconductors, pp.564 - 565, 2010

51

Development of Sub-100 mW Microwave RTD VCOs

Jeong, Y; Choi, S; Yang, Kyounghoonresearcher, IEEE International Conference On Nanotechnology, pp.1 - 3, IEEE, 2010-08

52

Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE

Yang, Kyounghoonresearcher; Muuns, G. O.; Wang, X.; Haddad, G. I., IEEE Int. Conf. on InP and Related Materials, pp.645 - 648, IEEE, 1997-05-11

53

Dynamic Range Enhancement of a Self-adaptive APS with Pulsed Photogate Bias

Cho, C; Lee, J; Baek, I; 양경훈researcher, Korean Conference on Semiconductors, pp.606 - 607, Korean Conference on Semiconductors, 2010

54

Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure

Kim, S; Yang, Kyounghoonresearcher, International Conference on Solid State Devices and Materials, pp.208 - 209, 2005

55

Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure

Kim,; 양경훈researcher, Korean Conference on Semiconductors, pp.447 - 448, 2006

56

Experimental investigation on temperature dependence of InP RTD-based Digital/Analog MMICs

Lee, J; Choi, S; Yang, Kyounghoonresearcher, 2009 International Nanotech Symposiym & Exhibition in Korea, 2009

57

Experimental study on temperature dependence of RTD-based low-power MMIC VCO

Choi S.; Jeong Y.; Yang, Kyounghoonresearcher, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, pp.302 - 304, IEEE, 2009-05-10

58

Fabrication and characterization of AlAs/InGaAs/InAs Resonant Tunneling Diodes

홍성철; 김형태; 최성순; 김석진; 송생섭; 양경훈researcher; 서광석, Korean Conference On Semiconductors, pp.341 - 342, 2003-02-27

59

Fabrication and characterization of RTD-HBT inverter

Lin, C. H.; Yang, Kyounghoonresearcher; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I.; Chow, D.H.; et al, 17th IEEE Cornell Conference, pp.42 - 43, IEEE, 2000-08-07

60

Fabrication of Edge-Illuminated Refracting Facet Photodiodes with on-chip V-grooves

Lee, B; Yoon, M; 양경훈researcher, Korean Conference On Semiconductors, pp.51 - 52, 2003

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