| 17841 | The DS/SSMA systems using trellis coding with asymmetric PSK signal constellation Park, S.I.; Bae, J.; Ryu, S.W.; Lee, Y.U.; Song, Iickho, pp.371 - 374, IEEE, 1995-05 |
| 17842 | The effect of the non discharge pulses applied to the auxiliary anode in the DC PDP Choi, Kyung Cheol, , 1994-06 |
| 17843 | The Effect of Active Learning in Source Domain on Target Domain 주민정; 유창동, 2019 대한전자공학회 하계학술대회, 대한전자공학회, 2019-06-27 |
| 17844 | The effect of annealing temperature on electrical properties of SBT/insulators/Si structure for MFIS in NDRO-type FRAM Lee, Hee Chul, pp.0 - 0, 1998-09-01 |
| 17845 | The effect of dielectric relaxation on DRAM operation Lee, Hee Chul, pp.0 - 0, 1998-08-01 |
| 17846 | The effect of front dielectric thickness on luminous efficacy in AC PDP with auxiliary electrode Cho, K.H.; Lee, S.-M.; Choi, C.S.; Choi, Kyung Cheol, 2008 SID International Symposium, pp.1686 - 1689, 123, 2008-05-20 |
| 17847 | The effect of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate Cho, Byung Jin; Loh, WY; Majhi, P; Lee, SH; Oh, JW; Sassman, B; Young, C; et al, 2008 Symposium on VLSI Technology, pp.56 - 57, 2008-06-17 |
| 17848 | The effect of horizontal dipole ratio on the efficiency of organic light-emitting diode with an external scattering layer Song, Jinouk; Lee, Jaeho; Lee, Woochan; Yoo, Seunghyup, The 18th International Meeting on Information Display, The Korean Information Display Society, 2018-08-30 |
| 17849 | The Effect of Hydrogen Incorporation in ZnO During ZnO formation Using Photo-Assisted Metalorganic Chemical Vapor Deposition (Photo-MOCVD) Lim, Koeng Su, Hpfburg, Vienna Austria, 1998-01-01 |
| 17850 | The effect of Interfacial Layer of High-K Dielectrics on GaAs Substrate Cho, Byung Jin; Tong, Y; Dalapati, GK; Oh, HJ, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
| 17851 | The Effect of Jitter Noise on Binary Input Intersymbol Interference Channel Capacity Moon, Jaekyun, ICC 2001, pp.0 - 0, 2001-06-14 |
| 17852 | The Effect of N-type Doped Graphene via Cs2CO3 for S/D Electrodes in Amorphous InGaZnO Thin-Film Transistors Park, Ick-Joon; Song, Chang-Woo; Ha, Young-Wook; Park, Hamin; Kim, Tae In; Choi, Sung-Yool, NANO KOREA 2015, 나노기술연구협의회, 2015-07-02 |
| 17853 | The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, Proc. of 1998 IEEE Hong Kong Electron Devices Meeting, pp.32 - 32, 1998-08-29 |
| 17854 | The effect of oxygen vacancies on the electrical properties of (Ba,Sr)TiO3 capacitors Lee, Hee Chul, The 4th International Conference on Electronic Materials, pp.0 - 0, 1998-08-01 |
| 17855 | The Effect of Poor Scattering on the Degrees-of-Freedom in Interfering Multiple-Access Channels Yoon, Jangho; Shin, Won Yong; Lee, Hwang Soo, 2015 IEEE 81st Vehicular Technology Conference (VTC Spring), pp.1 - 5, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2015-05-12 |
| 17856 | The Effect of Post Hydrogen Treatment on the Boron Doped a-SiC;H Film Using Mercury Photo-CVD Method and Its Application to Amorphous Silicon Solar Cells Lim, Koeng Su, Int. solar Energy Society, 1997-01-01 |
| 17857 | The Effect of Residual Impurity B or P on Photovoltaic Properties of Amorphous Si Solar Cells Konagai, M; Lim, Koeng Su; Sichanugrist, P; Komori, K; Takahashi, K, The 16th IEEE Photovoltaic Specialists Conference, Florida, pp.1321 - 1326, 1982 |
| 17858 | The Effect of Si-SiO2 Interface on the Excess Point Defect Distribution in Silicon Kim, Choong Ki, Symposium on Semiconductor Processing,ASTM/SEMI Meeting, pp.283 - 293, 1984 |
| 17859 | The Effect of Silver Nano-Particles on Surface Plasmon-enhanced OLEDs Choi, Kyung Cheol; Yeo, YW; Yang, KY, International Meetings on Information Display, 2009-10-15 |
| 17860 | The effect of spreading factor in MC-CDMA systems under multi-cell environments in correlated fading channels Koo, J.; Han, Youngnam, 2004 IEEE 60th Vehicular Technology Conference, VTC2004-Fall: Wireless Technologies for Global Security, v.60, pp.4983 - 4987, IEEE, 2004-09-26 |
