DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chai, Seung Wan | ko |
dc.contributor.author | Lim, Sungmook | ko |
dc.contributor.author | Hong, Song-Cheol | ko |
dc.date.accessioned | 2015-06-25T06:48:52Z | - |
dc.date.available | 2015-06-25T06:48:52Z | - |
dc.date.created | 2015-01-05 | - |
dc.date.created | 2015-01-05 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.12, pp.869 - 871 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://hdl.handle.net/10203/199167 | - |
dc.description.abstract | We present an antenna coupled non-resonant plasma-wave CMOS detector operating at 502 GHz, with a PMOS load and NMOS stacked structure. The gates of the NMOS plasma wave FETs, which are located in the middle of the stack, in a differential structure, are connected to the voltage-maximum points of a patch antenna. It was found that the high-input impedance of the detector causes high responsivity as the loaded Q of the antenna is enhanced and because the resultant high-voltage swing at the input allows the detector to have high responsivity. High input impedance can be achieved via using the stacked structure in conjunction with a small input transistor and the sub-threshold bias. The responsivity of stacked structure was also affected by source-drain voltage in the plasma-wave FET and active load resistor by PMOS. Therefore, it was found that the responsivity is closely related to the V-ds x I-ds x r(load)* product of the stacked structure, where I-ds is the bias current, V-ds is the voltage across the input NMOS plasma-wave FET and is the small signal resistance of the PMOS load parallel with plasma-wave FET channel resistance. The detector shows the higher response than a cold-FET detector by one order of magnitude. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | THz Detector with an Antenna Coupled Stacked CMOS Plasma-Wave FET | - |
dc.type | Article | - |
dc.identifier.wosid | 000345903500017 | - |
dc.identifier.scopusid | 2-s2.0-84914109080 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 869 | - |
dc.citation.endingpage | 871 | - |
dc.citation.publicationname | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.identifier.doi | 10.1109/LMWC.2014.2353211 | - |
dc.contributor.localauthor | Hong, Song-Cheol | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Detector | - |
dc.subject.keywordAuthor | photocurrent | - |
dc.subject.keywordAuthor | photovoltaic | - |
dc.subject.keywordAuthor | plasma wave FET | - |
dc.subject.keywordAuthor | plasma wave transistor | - |
dc.subject.keywordAuthor | terahertz | - |
dc.subject.keywordAuthor | THz | - |
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