An X-Ku Band Distributed GaN LNA MMIC with High Gain

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A high-gain wideband low noise amplifier (LNA) using 0.25-mu m Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 GHz to 15 GHz operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of 25.1+/-0.8 dB and input and output matching of -12 dB for all targeted frequencies. The measured minimum noise figure is 2.8 dB at 12.6 GHz and below 3.6 dB across all frequencies. It consumes 98 mA with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 dB to 24 dB with no significant variations of the input and output matching.
Publisher
IEEK PUBLICATION CENTER
Issue Date
2014-12
Language
English
Article Type
Article
Keywords

AMPLIFIER

Citation

Journal of Semiconductor Technology and Science, v.14, no.6, pp.818 - 823

ISSN
1598-1657
DOI
10.5573/JSTS.2014.14.6.818
URI
http://hdl.handle.net/10203/198589
Appears in Collection
EE-Journal Papers(저널논문)
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