A 15.5 dB, 17 mW, 240 GHz amplifier in 65 nm CMOS by correct interpretation and implementation of maximum achievable gain = 최대 구현 가능 이득에 대한 정확한 해석과 구현방법에 따른, 65 nm CMOS 기반의 15.5 dB, 17 mW, 240 GHz 증폭기

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Design of millimeter-wave (mm-wave) amplifiers beyond 100 GHz proves challenging. This thesis summarizes the challenges in mm-wave amplifier design as well as various approaches in dealing with them. A current review of the state of the art is also discussed. A gain-boosting technique based on the correct interpretation and implementation of the Maximum Achievable Gain $G_{max}$ is also introduced. Finally, a high gain, low power 240 GHz amplifier in 65 nm CMOS is presented, which shows the best performance among all other previously published works.
Advisors
Lee, Sang-Gugresearcher이상국
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
2014
Identifier
592411/325007  / 020124627
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.8, [ v, 43 p. ]

Keywords

mm-wave; 65 nm CMOS; gain-boosting; 증폭기; 240 GHz; mm-wave; 240 GHz; amplifier; gain-boosting; 65 nm CMOS

URI
http://hdl.handle.net/10203/196825
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=592411&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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