Process engineering of the surface passivation using $(NH_4)_2S$ for the InP MOS capacitor with ALD $Al_2O_3$ = $Al_2O_3$를 사용한 InP MOS capacitor에서의 $(NH_4)_2S$를 이용한 기판 표면 패시베이션의 실험적 최적화에 대한 연구

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dc.contributor.advisorChoi, Yang-Kyu-
dc.contributor.advisor최양규-
dc.contributor.authorHong, Hee-Jeong-
dc.contributor.author홍희정-
dc.date.accessioned2015-04-23T06:14:55Z-
dc.date.available2015-04-23T06:14:55Z-
dc.date.issued2014-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=592430&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/196822-
dc.description학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.8, [ ii, 37 ]-
dc.description.abstractAmmonium sulfide ($(NH_4)_2S$) is used for the pretreatment of an InP (100) substrate and its conditions are optimized. The capacitance-voltage (C-V) characteristics of InP MOS capacitors are analyzed by changing the concentration and treatment time of the ammonium sulfide solution. It was found that a 10% $(NH_4)_2S$ treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the a depletion or accumulation mode. After the InP substrate was passivated by the optimized ammonium sulfide, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density ($D_{it}$) prove that the growth of native oxide is suppressedeng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectIII-V semiconductor-
dc.subject황 패시베이션-
dc.subject황화암모늄-
dc.subject알루미늄 산화물-
dc.subject인듐 포스파이드-
dc.subject화합물 반도체-
dc.subjectindium phosphide (InP)-
dc.subjectAl2O3-
dc.subject(NH4)2S-
dc.subjectsulfur passivation-
dc.titleProcess engineering of the surface passivation using $(NH_4)_2S$ for the InP MOS capacitor with ALD $Al_2O_3$ = $Al_2O_3$를 사용한 InP MOS capacitor에서의 $(NH_4)_2S$를 이용한 기판 표면 패시베이션의 실험적 최적화에 대한 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN592430/325007 -
dc.description.department한국과학기술원 : 전기및전자공학과, -
dc.identifier.uid020124580-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.localauthor최양규-
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