Process engineering of the surface passivation using $(NH_4)_2S$ for the InP MOS capacitor with ALD $Al_2O_3$ = $Al_2O_3$를 사용한 InP MOS capacitor에서의 $(NH_4)_2S$를 이용한 기판 표면 패시베이션의 실험적 최적화에 대한 연구

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Ammonium sulfide ($(NH_4)_2S$) is used for the pretreatment of an InP (100) substrate and its conditions are optimized. The capacitance-voltage (C-V) characteristics of InP MOS capacitors are analyzed by changing the concentration and treatment time of the ammonium sulfide solution. It was found that a 10% $(NH_4)_2S$ treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the a depletion or accumulation mode. After the InP substrate was passivated by the optimized ammonium sulfide, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density ($D_{it}$) prove that the growth of native oxide is suppressed
Advisors
Choi, Yang-Kyuresearcher최양규
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
2014
Identifier
592430/325007  / 020124580
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.8, [ ii, 37 ]

Keywords

III-V semiconductor; 황 패시베이션; 황화암모늄; 알루미늄 산화물; 인듐 포스파이드; 화합물 반도체; indium phosphide (InP); Al2O3; (NH4)2S; sulfur passivation

URI
http://hdl.handle.net/10203/196822
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=592430&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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