학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.2, [ VI, 45 p. ]
금속-절연층-반도체 구조 축전기; 4H-SiC; NO post-oxidation anneal; near interface trap; density of interface trap; reliability; 계면; 질화; 안정성; 계면 포획 준위; NO 후열처리; 4H-SiC; Metal-oxide-semiconductor(MOS) capacitors; interface; nitridation
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