DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Woo Young | ko |
dc.contributor.author | Lee, Hee-Chul | ko |
dc.date.accessioned | 2015-04-15T02:08:18Z | - |
dc.date.available | 2015-04-15T02:08:18Z | - |
dc.date.created | 2015-04-13 | - |
dc.date.created | 2015-04-13 | - |
dc.date.created | 2015-04-13 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.citation | ORGANIC ELECTRONICS, v.19, pp.1 - 6 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | http://hdl.handle.net/10203/196080 | - |
dc.description.abstract | In ferroelectric material, polarization is defined as a volumetric density of dipole moments; therefore, macroscopically many different states of polarizations between positive remanent polarization and negative remanent polarization can be addressable. Simply by controlling the voltage range, multi-states of polarization could be possible. However, for reliable operation of such a multi-bit memory system, all individual states must be completely separated from other states such that only a certain portion of dipoles in a memory device needs to be switched at a certain state. Such a reliable operation would be achieved by spatially separating the switching area in which the individual thickness is different. In this work, it is demonstrated that reliable ferroelectric multi-bit memory could be realized by patterning and transferring ferroelectric polymer film. Also, for low-voltage operation, the highest thickness was designed as 150 nm, which enabled the multi-bit memory to operate within maximal 20 V. Furthermore, a timing diagram, retention and fatigue measurements showed that the fabricated multi-bit memory would be quite promising for emerging organic electronics. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SWITCHING CHARACTERISTICS | - |
dc.subject | GATE INSULATOR | - |
dc.subject | THIN-FILM | - |
dc.subject | TRANSISTORS | - |
dc.subject | COPOLYMER | - |
dc.subject | OPERATION | - |
dc.title | Low-voltage nonvolatile multi-bit memory fabricated by the patterning and transferring of ferroelectric polymer film | - |
dc.type | Article | - |
dc.identifier.wosid | 000350595300001 | - |
dc.identifier.scopusid | 2-s2.0-84961295560 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.beginningpage | 1 | - |
dc.citation.endingpage | 6 | - |
dc.citation.publicationname | ORGANIC ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.orgel.2015.01.025 | - |
dc.contributor.localauthor | Lee, Hee-Chul | - |
dc.contributor.nonIdAuthor | Kim, Woo Young | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ferroelectric polymer | - |
dc.subject.keywordAuthor | Patterning | - |
dc.subject.keywordAuthor | Transfer | - |
dc.subject.keywordAuthor | Multi-bit memory | - |
dc.subject.keywordAuthor | Ferroelectric polymer | - |
dc.subject.keywordAuthor | Patterning | - |
dc.subject.keywordAuthor | Transfer | - |
dc.subject.keywordAuthor | Multi-bit memory | - |
dc.subject.keywordPlus | SWITCHING CHARACTERISTICS | - |
dc.subject.keywordPlus | GATE INSULATOR | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | COPOLYMER | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | SWITCHING CHARACTERISTICS | - |
dc.subject.keywordPlus | GATE INSULATOR | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | COPOLYMER | - |
dc.subject.keywordPlus | OPERATION | - |
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