Ultrathin graphene and graphene oxide layers as a diffusion barrier for advanced Cu metallization

Cited 14 time in webofscience Cited 0 time in scopus
  • Hit : 168
  • Download : 568
We report on the diffusion barrier properties of chemical-vapor-deposition grown graphene, graphene oxide, and reduced graphene oxide (rGO) for copper metallization in integrated circuits. Single-layer graphene shows the best diffusion barrier performance among the three but it has poor integration compatibility, displaying weak adhesion and poor nucleation for Cu deposition on top of it. Within the allowable thermal budget in the back-end-of-line process, rGO in a range of 1 nm thickness shows excellent thermal stability with suitable integration compatibility at 400 degrees C for 30 min. The diffusion barrier property was verified through optical, physical, and chemical analyses. The use of an extremely thin rGO layer as a Cu barrier material is expected to provide an alternative route for further scaling of copper interconnect technology.
Publisher
AMER INST PHYSICS
Issue Date
2015-02
Language
English
Article Type
Article
Keywords

FILMS; TRANSPARENT; DEPOSITION; TANTALUM; DEVICES; SI

Citation

APPLIED PHYSICS LETTERS, v.106, no.6

ISSN
0003-6951
DOI
10.1063/1.4908559
URI
http://hdl.handle.net/10203/195845
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
000349845300067.pdf(2.9 MB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 14 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0