A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory

Abstract

A trigate FinFET with a charge trap gate dielectric is demonstrated for high-speed and long retention memory applications. For a capacitor-less dynamic memory cell, a nitride layer is utilized as a charge storage node and it is directly formed on a silicon channel. In addition, novel gate-stacks allow high-speed and WRITE processes under low voltage with remarkably endurable operation of up to 10(12) cycles. By virtue of the charge trap operation, stored data is maintained for >10(4) s at 125 degrees C.