We present, for the first time, a prototype active-matrix field emission display (AMFED) with 25×25 pixels in which polycrystalline silicon field emitter array (poly-Si FEA) and thin-film transistor (TFT) were monolithically integrated on an insulating substrate. The FEAs showed relatively large electron emissions above at a gate voltage of 50 V, and the TFTs were designed to have low off-state currents even though at high drain voltages. The integrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in improvement in the emission stability and reliability along with a low-voltage control of field emission below 25 V. With the prototype AMFED we have displayed character patterns by low-voltage peripheral circuits of 15 V in a high vacuum chamber.