MSM Photodetector on a Polysilicon Membrane for a Silicon-Based Wafer-Level Packaged LED

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A metal-semiconductor-metal (MSM) photodetector is fabricated on a thin polysilicon membrane embedded in a silicon-based wafer-level package for light-emitting diodes (LEDs) to accurately sense the brightness of a mounted LED. A thin polysilicon membrane, which is slightly askew above the LED chip, was made reproducibly and uniformly on a silicon substrate. In the membrane, an MSM photodetector having interdigitated fingers with 3 mu m width and 3 mu m space was fabricated. This device can receive light directly from the LED, and thereby shows a higher and more accurate photo-response, about 280 times higher than that of a conventional structure, to the LED mounted in the silicon-based wafer package.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2013-12
Language
English
Article Type
Article
Keywords

LIGHT-EMITTING-DIODES; FABRICATION; SENSORS

Citation

IEEE PHOTONICS TECHNOLOGY LETTERS, v.25, no.24, pp.2462 - 2465

ISSN
1041-1135
DOI
10.1109/LPT.2013.2288771
URI
http://hdl.handle.net/10203/190100
Appears in Collection
EE-Journal Papers(저널논문)
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