Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs

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The performance of III-V channel ultra-thin-body Schottky barrier (SB) MOSFETs is assessed by quantum mechanical simulations. All the Gamma-, L-, and Delta-valleys are included in the calculations, with their effective masses adjusted by the sp(3)d(5)s* tight-binding method. Our results show that InSb and InAs channel devices are not adequate for SB devices due to high ambipolar currents. InSb, InAs, and GaAs channel devices suffer from the serious density-of-states (DOS) bottleneck problem. Their transconductances are only about 1/4 of that of Si channel devices. On the other hand, GaSb channel devices which are immune from the DOS bottleneck show excellent performance. The transconductance and ON-state current that are, respectively, 1.2 and 1.8 times as large as that of Si-based devices can be achievable.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-07
Language
English
Article Type
Article
Keywords

BALLISTIC N-MOSFETS; TRANSPORT; GATE

Citation

IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728

ISSN
0741-3106
DOI
10.1109/LED.2014.2322370
URI
http://hdl.handle.net/10203/189851
Appears in Collection
EE-Journal Papers(저널논문)
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