p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices

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dc.contributor.authorChoi, Won Chulko
dc.contributor.authorLee, Jaehyunko
dc.contributor.authorShin, Mincheolko
dc.date.accessioned2014-09-02-
dc.date.available2014-09-02-
dc.date.created2013-11-22-
dc.date.created2013-11-22-
dc.date.issued2014-01-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/189707-
dc.description.abstractWe investigate the performance of Ge and Si channel p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-pMOSFETs) based on rigorous quantum mechanical calculations. The multiband k . p method and the nonequilibrium Green's function are used. We find that Ge SB-pMOSFETs show superior performance in terms of ON-state current (I-ON), subthreshold swing, and the equivalent oxide thickness scaling. In particular, I-ON of Ge SB-pMOSFETs is estimated to become about 2.5 times larger than that of Si SB-pMOSFET if the possibility of achieving low Schottky barrier height (SBH) in Ge-channel devices is taken into account. As the channel width is scaled down to a few nanometers, however, the differences in device performance become smaller. This is explained by the increase of the tunneling effective mass due to the heavy-light hole coupling effect and the effectively increased SBH due to the size quantization effect.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectDOPANT SEGREGATION-
dc.subjectSOURCE/DRAIN-
dc.subjectPERFORMANCE-
dc.subjectGATE-
dc.subjectGERMANIUM-
dc.subjectBODY-
dc.subjectSIMULATION-
dc.subjectCONTACTS-
dc.subjectSILICON-
dc.titlep-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices-
dc.typeArticle-
dc.identifier.wosid000330619100006-
dc.identifier.scopusid2-s2.0-84891558352-
dc.type.rimsART-
dc.citation.volume61-
dc.citation.issue1-
dc.citation.beginningpage37-
dc.citation.endingpage43-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2013.2292008-
dc.contributor.localauthorShin, Mincheol-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGermanium-
dc.subject.keywordAuthorhole transport-
dc.subject.keywordAuthork . p method-
dc.subject.keywordAuthornonequilibrium Green&apos-
dc.subject.keywordAuthors function (NEGF)-
dc.subject.keywordAuthorp-type MOSFETs-
dc.subject.keywordAuthorSchottky barriers-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusDOPANT SEGREGATION-
dc.subject.keywordPlusSOURCE/DRAIN-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusGATE-
dc.subject.keywordPlusGERMANIUM-
dc.subject.keywordPlusBODY-
dc.subject.keywordPlusSIMULATION-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusSILICON-
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