p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices

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We investigate the performance of Ge and Si channel p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-pMOSFETs) based on rigorous quantum mechanical calculations. The multiband k . p method and the nonequilibrium Green's function are used. We find that Ge SB-pMOSFETs show superior performance in terms of ON-state current (I-ON), subthreshold swing, and the equivalent oxide thickness scaling. In particular, I-ON of Ge SB-pMOSFETs is estimated to become about 2.5 times larger than that of Si SB-pMOSFET if the possibility of achieving low Schottky barrier height (SBH) in Ge-channel devices is taken into account. As the channel width is scaled down to a few nanometers, however, the differences in device performance become smaller. This is explained by the increase of the tunneling effective mass due to the heavy-light hole coupling effect and the effectively increased SBH due to the size quantization effect.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-01
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; DOPANT SEGREGATION; SOURCE/DRAIN; PERFORMANCE; GATE; GERMANIUM; BODY; SIMULATION; CONTACTS; SILICON

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43

ISSN
0018-9383
DOI
10.1109/TED.2013.2292008
URI
http://hdl.handle.net/10203/189707
Appears in Collection
EE-Journal Papers(저널논문)
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