Performance comparison of wet-etched and dry-etched Geiger-mode avalanche photodiodes using a single diffusion process

Abstract

In this paper, we compare the performances of wet-etched and dry-etched Geiger-mode avalanche photodiodes (GM-APDs) using a single diffusion process at a wavelength of 1.55-μm. The single-diffused GM-APD based on a wet recess-etching has demonstrated the good performances of a dark count rate of 0.03 kHz/μm and a photon detection efficiency of 17.1% at 240 K.