High-performance thin-film transistors produced from highly separated solution-processed carbon nanotubes

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Transistors utilizing carbon nanotube (CNT) thin films have exhibited high on-currents and mobilites greater than those of alternative channel materials. One critical problem that has limited the utilization of CNT thin-film transistors (TFTs) is the occurrence of unavoidable parasitic current paths stemming from metallic nanotubes. In this work, we experimentally demonstrate high-yield, high-performance TFTs composed of a highly purified single-walled carbon nanotube (SWNT) network. A solution process for a highly separated 99.9% semiconducting SWNT solution is used to acquire a significant enhancement in transistor performance, such as a high on/off ratio, high mobility, and high yields close to 100%.
Publisher
AMER INST PHYSICS
Issue Date
2014-04
Language
English
Article Type
Article
Keywords

ALIGNED ARRAYS; ELECTRONICS; LOGIC; NETWORKS; CIRCUITS; DISPLAY; SENSORS; INKS

Citation

APPLIED PHYSICS LETTERS, v.104, no.14

ISSN
0003-6951
DOI
10.1063/1.4871100
URI
http://hdl.handle.net/10203/189199
Appears in Collection
EE-Journal Papers(저널논문)
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