Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of Glass/SnO2/MoO3/i-a-Si/LiF/Al

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dc.contributor.authorYang, Jihwanko
dc.contributor.authorKang, Sangjungko
dc.contributor.authorHong, Yun Hoko
dc.contributor.authorLim, Koeng Suko
dc.date.accessioned2014-08-29T01:12:27Z-
dc.date.available2014-08-29T01:12:27Z-
dc.date.created2014-01-27-
dc.date.created2014-01-27-
dc.date.issued2014-01-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.35, no.1, pp.96 - 98-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/188706-
dc.description.abstractWe fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of glass/SnO2/MoO3/i-a-Si/LiF/Al. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the MoO3 than that of a conventional amorphous silicon carbide film. To solve these drawbacks, we UV-treated on the MoO3 layer, obtaining a greatly enhanced conversion efficiency of 6.42%.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleDoping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of Glass/SnO2/MoO3/i-a-Si/LiF/Al-
dc.typeArticle-
dc.identifier.wosid000329061300032-
dc.identifier.scopusid2-s2.0-84891523158-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.issue1-
dc.citation.beginningpage96-
dc.citation.endingpage98-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2013.2289309-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLim, Koeng Su-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorDoping free-
dc.subject.keywordAuthorMoO3-
dc.subject.keywordAuthorLiF-
dc.subject.keywordAuthori-a-Si solar cells-
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