Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of Glass/SnO2/MoO3/i-a-Si/LiF/Al

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We fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of glass/SnO2/MoO3/i-a-Si/LiF/Al. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the MoO3 than that of a conventional amorphous silicon carbide film. To solve these drawbacks, we UV-treated on the MoO3 layer, obtaining a greatly enhanced conversion efficiency of 6.42%.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-01
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.35, no.1, pp.96 - 98

ISSN
0741-3106
DOI
10.1109/LED.2013.2289309
URI
http://hdl.handle.net/10203/188706
Appears in Collection
EE-Journal Papers(저널논문)
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