0.7-2.7 GHz wideband CMOS low-noise amplifier for LTE application

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A wideband low-noise amplifier (LNA) for long-term evolution applications is presented. A capacitive cross-coupled common-gate in combination with current-bleeding common-source topologies is adopted for wideband input matching, high gain and low noise figure (NF). Inter-cascade inductors are adopted to cancel the inter-stage parasitics, which extend input matching and operational bandwidth to higher frequency with additional NF reduction. Implemented in a 0.18 mu m CMOS technology, the proposed wideband LNA shows a voltage gain of 17 dB, a NF of <2.5 dB, vertical bar S-11 vertical bar of higher than 10 dB and a maximum IIP3 of + 1.52 dBm over the frequency range of 0.7-2.7 GHz while consuming 7.5 mA from a 1.8 V supply.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2013-11
Language
English
Article Type
Article
Keywords

LNA

Citation

ELECTRONICS LETTERS, v.49, no.23, pp.1433 - 1435

ISSN
0013-5194
DOI
10.1049/el.2013.3103
URI
http://hdl.handle.net/10203/187364
Appears in Collection
EE-Journal Papers(저널논문)
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