Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient

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We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I–V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2±3.7 W/m·K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2013-12
Language
English
Article Type
Article
Keywords

THERMOELECTRIC PROPERTIES; SUPERLATTICES

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.12, pp.7801 - 7805

ISSN
1533-4880
DOI
10.1166/jnn.2013.8103
URI
http://hdl.handle.net/10203/187357
Appears in Collection
EE-Journal Papers(저널논문)
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