Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

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A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H-2) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H-2 detection. The drain current of the PdNP-decorated device reversibly responds to H-2 at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface. (C) 2014 AIP Publishing LLC.
Publisher
AMER INST PHYSICS
Issue Date
2014-01
Language
English
Article Type
Article
Keywords

SENSORS; NANOTUBES

Citation

APPLIED PHYSICS LETTERS, v.104, no.1

ISSN
0003-6951
DOI
10.1063/1.4861228
URI
http://hdl.handle.net/10203/187336
Appears in Collection
EE-Journal Papers(저널논문)ME-Journal Papers(저널논문)
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