Performance evaluation of GaN light-emitting diodes using transferred graphene as current spreading layer

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This study elucidates the correlation among conductivity of graphene and interface aspects in GaN light-emitting diodes (LEDs). Using a multilayer graphene of low sheet resistance, it is demonstrated that graphene alone can make ohmic contact with p-GaN without necessitating additional interlayer. Large-area blue LED with relatively low contact resistance in the order of 10(-2) ohm-cm(2) and improved forward voltage of 3.2 +/- 0.1 V was realized irrespective of the use of the interlayer. The results from parallel evaluation experiments performed by varying the layer numbers of graphene with ultrathin NiOx interlayer revealed that the poor lateral conductivity of monolayer or few layer graphene can be well compensated by the interlayer. A combination of three layer graphene and NiOx offered device with enhanced electro-optical performance. But the Schottky barrier associated with the inadequate adhesion of transferred graphene dominates all the benefits and becomes a major bottleneck preventing the formation of low resistance stable ohmic contact. (c) 2014 AIP Publishing LLC.
Publisher
AMER INST PHYSICS
Issue Date
2014-02
Language
English
Article Type
Article
Keywords

ELECTRODE; EMISSION

Citation

JOURNAL OF APPLIED PHYSICS, v.115, no.5

ISSN
0021-8979
DOI
10.1063/1.4863640
URI
http://hdl.handle.net/10203/187198
Appears in Collection
EE-Journal Papers(저널논문)
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