Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory

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Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K-and O K-edges, both the RRAM junctions and the I-0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I-0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.
Publisher
WILEY-BLACKWELL
Issue Date
2014-01
Language
English
Article Type
Article
Keywords

KeyWords Plus:CARBON NANOTUBES; SPECTROMICROSCOPY; ABSORPTION; NANOSCALE; PARTICLES; SPECTROSCOPY; BLENDS; DEVICE; STXM

Citation

JOURNAL OF SYNCHROTRON RADIATION, v.21, pp.170 - 176

ISSN
0909-0495
DOI
10.1107/S1600577513026696
URI
http://hdl.handle.net/10203/187102
Appears in Collection
EE-Journal Papers(저널논문)
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