A comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes

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dc.contributor.authorLee, MYko
dc.contributor.authorKim, YHko
dc.contributor.authorLee, NHko
dc.contributor.authorLee, Yong Sooko
dc.contributor.authorLee, Hee Chulko
dc.date.accessioned2010-05-18T01:54:02Z-
dc.date.available2010-05-18T01:54:02Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-06-
dc.identifier.citationJOURNAL OF ELECTRONIC MATERIALS, v.35, pp.1429 - 1433-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/10203/18405-
dc.description.abstractIn this study, we investigated the effects of gamma radiation on ZnS/CdTe-passivated HgCdTe photodiodes that were fabricated with one of two different surface treatments using bromine, Br-2, or hydrazine, N2H4. Unlike the ZnS-passivated HgCdTe photodiodes, the ZnS/CdTe-passivated HgCdTe photodiodes showed no degradation in resistance-area product at zero bias (ROA) values after gamma irradiation of up to 1 Mrad. However, there is a significant difference between the bromine- and hydrazine-treated samples. Regardless of the dose of gamma radiation, there was little change in the forward current characteristics of the hydrazine-treated diode in comparison with the conventional bromine-treated diode. The hydrazine-treated diode showed fairly uniform R(0)A values of > 10(7) Omega-cm(2) up to 1 Mrad of gamma irradiation, whereas the bromine-treated diode showed an abrupt change in R(0)A values from similar to 10(6) Omega-cm(2) to similar to 10(7) Omega-cm(2) after gamma irradiation. Therefore, for use in a gamma radiation environment, the best combination for high-performance HgCdTe photodiodes is a ZnS/CdTe passivant that has been treated with hydrazine.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherSPRINGER-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectSURFACE-TREATMENT-
dc.subjectZNS-
dc.subjectINTERFACES-
dc.titleA comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes-
dc.typeArticle-
dc.identifier.wosid000238819400048-
dc.identifier.scopusid2-s2.0-33746285113-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.beginningpage1429-
dc.citation.endingpage1433-
dc.citation.publicationnameJOURNAL OF ELECTRONIC MATERIALS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorLee, MY-
dc.contributor.nonIdAuthorKim, YH-
dc.contributor.nonIdAuthorLee, NH-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorbromine-
dc.subject.keywordAuthorC-V-
dc.subject.keywordAuthorHgCdTe-
dc.subject.keywordAuthorhydrazine-
dc.subject.keywordAuthorI-V-
dc.subject.keywordAuthorphotodiode-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusSURFACE-TREATMENT-
dc.subject.keywordPlusZNS-
dc.subject.keywordPlusINTERFACES-
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