DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, CH | ko |
dc.contributor.author | Paik, SW | ko |
dc.contributor.author | Park, JW | ko |
dc.contributor.author | Lee, J | ko |
dc.contributor.author | Moon, YM | ko |
dc.contributor.author | Choi, JB | ko |
dc.contributor.author | Jung, H | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.contributor.author | Kim, CK | ko |
dc.contributor.author | Hahn, MS | ko |
dc.contributor.author | Song, BK | ko |
dc.contributor.author | Hou, YB | ko |
dc.contributor.author | Kang, TW | ko |
dc.contributor.author | Yoo, KH | ko |
dc.contributor.author | Jeoung, YT | ko |
dc.contributor.author | Kim, HK | ko |
dc.contributor.author | Kim, JM | ko |
dc.date.accessioned | 2010-05-13T08:58:20Z | - |
dc.date.available | 2010-05-13T08:58:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-06 | - |
dc.identifier.citation | JOURNAL OF ELECTRONIC MATERIALS, v.27, no.6, pp.668 - 671 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | http://hdl.handle.net/10203/18298 | - |
dc.description.abstract | We have used multi-step surface passivation process integrating electrochemical reduction and W exposure with native sulfidization by H2S gas to obtain high quality ZnS/p-HgCdTe interface. It shows very low parasitic interface charge density of the order of 10(10)cm(-2). The insulating ZnS layer also exhibits very high resistivity of similar to 10(12) Ohm cm. The resulting fabricated HgCdTe-MISFETs show 2D quantum effects. magnetoresistance measured at 1.5K displays oscillations which begin to appear above the gate voltage of 10V. They are identified as the Shubnikov-de Haas oscillations involving three electronic subbands.The magnetotransport data are quantitatively analyzed with the calculated Landau level-fan diagram and confirm the 2D subband quantization of the inversion layer at the ZnS/p-HgCdTe interface. This result demonstrates successful role of the multi-step surface passivation for realizing 2D ZnS/HgCdTe interface which will provide high quality 2DEG resevoir basis in future Hg-based narrow-gap nanostructure device applications. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | MINERALS METALS MATERIALS SOC | - |
dc.title | HgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects | - |
dc.type | Article | - |
dc.identifier.wosid | 000074325800033 | - |
dc.identifier.scopusid | 2-s2.0-0007010703 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 668 | - |
dc.citation.endingpage | 671 | - |
dc.citation.publicationname | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Lee, CH | - |
dc.contributor.nonIdAuthor | Paik, SW | - |
dc.contributor.nonIdAuthor | Park, JW | - |
dc.contributor.nonIdAuthor | Lee, J | - |
dc.contributor.nonIdAuthor | Moon, YM | - |
dc.contributor.nonIdAuthor | Choi, JB | - |
dc.contributor.nonIdAuthor | Jung, H | - |
dc.contributor.nonIdAuthor | Kim, CK | - |
dc.contributor.nonIdAuthor | Hahn, MS | - |
dc.contributor.nonIdAuthor | Song, BK | - |
dc.contributor.nonIdAuthor | Hou, YB | - |
dc.contributor.nonIdAuthor | Kang, TW | - |
dc.contributor.nonIdAuthor | Yoo, KH | - |
dc.contributor.nonIdAuthor | Jeoung, YT | - |
dc.contributor.nonIdAuthor | Kim, HK | - |
dc.contributor.nonIdAuthor | Kim, JM | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | 2D subband quantization | - |
dc.subject.keywordAuthor | HgCdTe-MISFET | - |
dc.subject.keywordAuthor | magnetotransport | - |
dc.subject.keywordAuthor | multi-step surface passivation | - |
dc.subject.keywordAuthor | narrow-gap nanodevices | - |
dc.subject.keywordAuthor | SdH oscillations | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.