HgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects

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dc.contributor.authorLee, CHko
dc.contributor.authorPaik, SWko
dc.contributor.authorPark, JWko
dc.contributor.authorLee, Jko
dc.contributor.authorMoon, YMko
dc.contributor.authorChoi, JBko
dc.contributor.authorJung, Hko
dc.contributor.authorLee, Hee Chulko
dc.contributor.authorKim, CKko
dc.contributor.authorHahn, MSko
dc.contributor.authorSong, BKko
dc.contributor.authorHou, YBko
dc.contributor.authorKang, TWko
dc.contributor.authorYoo, KHko
dc.contributor.authorJeoung, YTko
dc.contributor.authorKim, HKko
dc.contributor.authorKim, JMko
dc.date.accessioned2010-05-13T08:58:20Z-
dc.date.available2010-05-13T08:58:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-06-
dc.identifier.citationJOURNAL OF ELECTRONIC MATERIALS, v.27, no.6, pp.668 - 671-
dc.identifier.issn0361-5235-
dc.identifier.urihttp://hdl.handle.net/10203/18298-
dc.description.abstractWe have used multi-step surface passivation process integrating electrochemical reduction and W exposure with native sulfidization by H2S gas to obtain high quality ZnS/p-HgCdTe interface. It shows very low parasitic interface charge density of the order of 10(10)cm(-2). The insulating ZnS layer also exhibits very high resistivity of similar to 10(12) Ohm cm. The resulting fabricated HgCdTe-MISFETs show 2D quantum effects. magnetoresistance measured at 1.5K displays oscillations which begin to appear above the gate voltage of 10V. They are identified as the Shubnikov-de Haas oscillations involving three electronic subbands.The magnetotransport data are quantitatively analyzed with the calculated Landau level-fan diagram and confirm the 2D subband quantization of the inversion layer at the ZnS/p-HgCdTe interface. This result demonstrates successful role of the multi-step surface passivation for realizing 2D ZnS/HgCdTe interface which will provide high quality 2DEG resevoir basis in future Hg-based narrow-gap nanostructure device applications.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherMINERALS METALS MATERIALS SOC-
dc.titleHgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects-
dc.typeArticle-
dc.identifier.wosid000074325800033-
dc.identifier.scopusid2-s2.0-0007010703-
dc.type.rimsART-
dc.citation.volume27-
dc.citation.issue6-
dc.citation.beginningpage668-
dc.citation.endingpage671-
dc.citation.publicationnameJOURNAL OF ELECTRONIC MATERIALS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorLee, CH-
dc.contributor.nonIdAuthorPaik, SW-
dc.contributor.nonIdAuthorPark, JW-
dc.contributor.nonIdAuthorLee, J-
dc.contributor.nonIdAuthorMoon, YM-
dc.contributor.nonIdAuthorChoi, JB-
dc.contributor.nonIdAuthorJung, H-
dc.contributor.nonIdAuthorKim, CK-
dc.contributor.nonIdAuthorHahn, MS-
dc.contributor.nonIdAuthorSong, BK-
dc.contributor.nonIdAuthorHou, YB-
dc.contributor.nonIdAuthorKang, TW-
dc.contributor.nonIdAuthorYoo, KH-
dc.contributor.nonIdAuthorJeoung, YT-
dc.contributor.nonIdAuthorKim, HK-
dc.contributor.nonIdAuthorKim, JM-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthor2D subband quantization-
dc.subject.keywordAuthorHgCdTe-MISFET-
dc.subject.keywordAuthormagnetotransport-
dc.subject.keywordAuthormulti-step surface passivation-
dc.subject.keywordAuthornarrow-gap nanodevices-
dc.subject.keywordAuthorSdH oscillations-
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