Showing results 1 to 1 of 1
Interfacial layer properties of HfO2 films formed by plasma-enhanced atomic layer deposition on silicon Park, PK; Roh, JS; Choi, BH; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.5, pp.F34 - F37, 2006-03 |
Discover