Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject C49 TISI2

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1
GROWTH OF EPITAXIAL C54 TISI2 ON SI(111) SUBSTRATE BY INSITU ANNEALING IN ULTRAHIGH-VACUUM

KIM, KH; LEE, JJ; SEO, DJ; CHOI, CK; HONG, SR; KOH, JD; KIM, SC; et al, JOURNAL OF APPLIED PHYSICS, v.71, no.8, pp.3812 - 3815, 1992-04

2
IN-SITU SOLID-PHASE EPITAXIAL-GROWTH OF C49-TISI2 ON SI(111)-7X7 SUBSTRATE

CHOI, CK; YANG, SJ; RYU, JY; Lee, JeongYongresearcher; PARK, HH; KWON, OJ; LEE, YP; et al, APPLIED PHYSICS LETTERS, v.63, no.4, pp.485 - 487, 1993-07

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