Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Cited 30 time in webofscience Cited 0 time in scopus
  • Hit : 383
  • Download : 1059
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789975]
Publisher
AMER INST PHYSICS
Issue Date
2013-01
Language
English
Article Type
Article
Keywords

ATOMIC LAYERS; HIGH-MOBILITY; GRAPHENE; GROWTH

Citation

APPLIED PHYSICS LETTERS, v.102, no.4

ISSN
0003-6951
DOI
10.1063/1.4789975
URI
http://hdl.handle.net/10203/174601
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
000314723600084.pdf(1.01 MB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 30 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0