Effect of a Surface Pre-Treatment on Graphene Growth using a SiC Substrate

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This study reports surface pre-treatment techniques for the formation of a high-quality graphene layer on a SiC surface. It is demonstrated that silicon passivation of SiC surface using a silane flow and subsequent sacrificial oxidation can significantly improve the surface condition of a graphene layer on SIC by ensuring much fewer carbon dumps and wrinkles, reducing the electrical resistance, and providing smoother surface roughness and a larger domain size. The effect of in situ cleaning by a SF(6) treatment before graphitization was also studied. It was found that in situ cleaning using SF(6) gas can be a simple and effective means of improving the quality of a graphene layer grown on SiC. The results of this study suggest that a surface treatment before graphitization is the key to synthesize high-quality epitaxial graphene layer. (C) 2009 Elsevier B.V. All rights reserved.
Publisher
Elsevier Science Bv
Issue Date
2010-10
Language
English
Article Type
Article
Keywords

ELECTRONIC-STRUCTURE; GRAPHITE

Citation

MICROELECTRONIC ENGINEERING, v.87, no.10, pp.2002 - 2007

ISSN
0167-9317
DOI
10.1016/j.mee.2009.12.072
URI
http://hdl.handle.net/10203/174435
Appears in Collection
EE-Journal Papers(저널논문)
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