DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Woon-Ik | ko |
dc.contributor.author | You, Byoung-Kuk | ko |
dc.contributor.author | Mun, Beom-Ho | ko |
dc.contributor.author | Seo, Hyeon Kook | ko |
dc.contributor.author | Lee, Jeong-Yong | ko |
dc.contributor.author | Hosaka, Sumio | ko |
dc.contributor.author | Yin, You | ko |
dc.contributor.author | Ross, C. A. | ko |
dc.contributor.author | Lee, Keon-Jae | ko |
dc.contributor.author | Jung, Yeon-Sik | ko |
dc.date.accessioned | 2013-06-07T07:59:58Z | - |
dc.date.available | 2013-06-07T07:59:58Z | - |
dc.date.created | 2013-05-07 | - |
dc.date.created | 2013-05-07 | - |
dc.date.created | 2013-05-07 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | ACS NANO, v.7, no.3, pp.2651 - 2658 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10203/173809 | - |
dc.description.abstract | Phase change memory (PCM), which exploits the phase change behavior of chalcogenide materials, affords tremendous advantages over conventional solid-state memory due to its nonvolatility, high speed, and salability. However, high power consumption of PCM poses a critical challenge and has been the most significant obstacle to its widespread commercialization. Here, we present a novel approach based on the self-assembly of a block copolymer (BCP) to form a thin nanostructured SiOx layer that locally blocks the contact between a heater electrode and a phase change material. The writing current is decreased 5-fold (corresponding to a power reduction by 1/20) as the occupying area fraction of SiOx nanostructures is Increased from a fill factor of 9.1% to 63.6%. Simulation results theoretically explain the current reduction mechanism by localized switching of BCP-blocked phase change materials. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction | - |
dc.type | Article | - |
dc.identifier.wosid | 000316846700085 | - |
dc.identifier.scopusid | 2-s2.0-84875650179 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 2651 | - |
dc.citation.endingpage | 2658 | - |
dc.citation.publicationname | ACS NANO | - |
dc.identifier.doi | 10.1021/nn4000176 | - |
dc.contributor.localauthor | Lee, Jeong-Yong | - |
dc.contributor.localauthor | Lee, Keon-Jae | - |
dc.contributor.localauthor | Jung, Yeon-Sik | - |
dc.contributor.nonIdAuthor | You, Byoung-Kuk | - |
dc.contributor.nonIdAuthor | Mun, Beom-Ho | - |
dc.contributor.nonIdAuthor | Hosaka, Sumio | - |
dc.contributor.nonIdAuthor | Yin, You | - |
dc.contributor.nonIdAuthor | Ross, C. A. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | block copolymers | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | phase change memory | - |
dc.subject.keywordPlus | DIBLOCK COPOLYMER | - |
dc.subject.keywordPlus | DATA-STORAGE | - |
dc.subject.keywordPlus | SCALABLE NONVOLATILE | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | TEMPLATES | - |
dc.subject.keywordPlus | PATTERNS | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | ELECTRODES | - |
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