Development of FBAR Devices Based on Thermal Annealing Treatments of Nitrogen [N]-Incorporated ZnO Films

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The improvements of the resonance characteristics of the film bulk acoustic wave resonator (FBAR) devices fabricated employing nitrogen [N]-incorporated ZnO films are presented. The N-incorporated ZnO films were sputter-deposited in a mixture of N2O and Ar gases as the reactive and sputtering gases, respectively. Mainly due to the thermal annealing treatments of the N-incorporated ZnO films, the resonance characteristics could be significantly improved. The excellent return loss (S11) of -63 dB was observed at ~0.6 GHz, which is better than ever reported in this device technology regime.
Publisher
IEEE MTT-S
Issue Date
2011-08-24
Language
English
Citation

IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals , pp.1 - 2

DOI
10.1109/IMWS2.2011.6027208
URI
http://hdl.handle.net/10203/169374
Appears in Collection
EE-Conference Papers(학술회의논문)
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