O-vacancy in amorphous indium-gallium-zinc oxide thin film transistors: origin of negative bias illumination stress instability

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Publisher
한국반도체학회
Issue Date
2011-02
Language
ENG
Citation

한국반도체학술대회

URI
http://hdl.handle.net/10203/168627
Appears in Collection
PH-Conference Papers(학술회의논문)
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