DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, S.W. | ko |
dc.contributor.author | Park, S.C. | ko |
dc.contributor.author | Chun, S. | ko |
dc.date.accessioned | 2007-10-05T07:04:08Z | - |
dc.date.available | 2007-10-05T07:04:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1988-02 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.54, no.8, pp.693 - 695 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1663 | - |
dc.description.abstract | During titanium silicide(TiSi2) formation by rapid thermal annealing(RTA), the redistribution of implanted arsenic was investigated by means of Auger electron spectroscopy(AES) and secondary-ion mass sepectroscopy(SIMS). By using 30nm amorphous silicon(a-Si) film deposited sequentially on 50nm titanium film without breaking the vacuum, the As dopant redistribution is suppressed due to the reduction of consumption of silicon substrate(Si-sub) during TiSi2 formation. The AES shows that the silicon, which is required for TiSi2 formation, is supplied from the a-Si film more rapidly than from the Si-sub. Also, the conversion of deposited Ti film into TiSi2 is complete because the a-Si film on Ti film prevents the infiltration of oxygen impurity into the Ti film during the exposure to air before annealing | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Effects of amorphous silicon capping layer on arsenic redistribution during TiSi2 formation | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 54 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 693 | - |
dc.citation.endingpage | 695 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, S.W. | - |
dc.contributor.localauthor | Chun, S. | - |
dc.contributor.nonIdAuthor | Park, S.C. | - |
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