Effects of amorphous silicon capping layer on arsenic redistribution during TiSi2 formation

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dc.contributor.authorKang, S.W.ko
dc.contributor.authorPark, S.C.ko
dc.contributor.authorChun, S.ko
dc.date.accessioned2007-10-05T07:04:08Z-
dc.date.available2007-10-05T07:04:08Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1988-02-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.54, no.8, pp.693 - 695-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/1663-
dc.description.abstractDuring titanium silicide(TiSi2) formation by rapid thermal annealing(RTA), the redistribution of implanted arsenic was investigated by means of Auger electron spectroscopy(AES) and secondary-ion mass sepectroscopy(SIMS). By using 30nm amorphous silicon(a-Si) film deposited sequentially on 50nm titanium film without breaking the vacuum, the As dopant redistribution is suppressed due to the reduction of consumption of silicon substrate(Si-sub) during TiSi2 formation. The AES shows that the silicon, which is required for TiSi2 formation, is supplied from the a-Si film more rapidly than from the Si-sub. Also, the conversion of deposited Ti film into TiSi2 is complete because the a-Si film on Ti film prevents the infiltration of oxygen impurity into the Ti film during the exposure to air before annealing-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.titleEffects of amorphous silicon capping layer on arsenic redistribution during TiSi2 formation-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume54-
dc.citation.issue8-
dc.citation.beginningpage693-
dc.citation.endingpage695-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKang, S.W.-
dc.contributor.localauthorChun, S.-
dc.contributor.nonIdAuthorPark, S.C.-
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