Effects of amorphous silicon capping layer on arsenic redistribution during TiSi2 formation

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During titanium silicide(TiSi2) formation by rapid thermal annealing(RTA), the redistribution of implanted arsenic was investigated by means of Auger electron spectroscopy(AES) and secondary-ion mass sepectroscopy(SIMS). By using 30nm amorphous silicon(a-Si) film deposited sequentially on 50nm titanium film without breaking the vacuum, the As dopant redistribution is suppressed due to the reduction of consumption of silicon substrate(Si-sub) during TiSi2 formation. The AES shows that the silicon, which is required for TiSi2 formation, is supplied from the a-Si film more rapidly than from the Si-sub. Also, the conversion of deposited Ti film into TiSi2 is complete because the a-Si film on Ti film prevents the infiltration of oxygen impurity into the Ti film during the exposure to air before annealing
Publisher
AMER INST PHYSICS
Issue Date
1988-02
Language
ENG
Citation

APPLIED PHYSICS LETTERS, v.54, no.8, pp.693 - 695

ISSN
0003-6951
URI
http://hdl.handle.net/10203/1663
Appears in Collection
MS-Journal Papers(저널논문)RIMS Journal Papers
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