Effects of amorphous silicon capping layer on arsenic redistribution during TiSi2 formation

During titanium silicide(TiSi2) formation by rapid thermal annealing(RTA), the redistribution of implanted arsenic was investigated by means of Auger electron spectroscopy(AES) and secondary-ion mass sepectroscopy(SIMS). By using 30nm amorphous silicon(a-Si) film deposited sequentially on 50nm titanium film without breaking the vacuum, the As dopant redistribution is suppressed due to the reduction of consumption of silicon substrate(Si-sub) during TiSi2 formation. The AES shows that the silicon, which is required for TiSi2 formation, is supplied from the a-Si film more rapidly than from the Si-sub. Also, the conversion of deposited Ti film into TiSi2 is complete because the a-Si film on Ti film prevents the infiltration of oxygen impurity into the Ti film during the exposure to air before annealing
Publisher
AMER INST PHYSICS
Issue Date
1988-02
Language
ENG
Citation

APPLIED PHYSICS LETTERS, v.54, no.8, pp.693 - 695

ISSN
0003-6951
URI
http://hdl.handle.net/10203/1663
Appears in Collection
MS-Journal Papers(저널논문)RIMS Journal Papers
Files in This Item
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