A NEW PARAMETER EXTRACTION TECHNIQUE FOR SMALL-SIGNAL EQUIVALENT-CIRCUIT OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS

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dc.contributor.authorLEE, SHko
dc.contributor.authorRYUM, BRko
dc.contributor.authorKang, Sang-Wonko
dc.date.accessioned2007-10-05T06:57:47Z-
dc.date.available2007-10-05T06:57:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1994-02-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.2, pp.233 - 238-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/1662-
dc.description.abstractWe propose a new parameter extraction method for advanced polysilicon emitter bipolar transistors. This method is based on the predetermination of equivalent circuit parameters using the analytical expressions of de-embedded Z parameters of these devices. These parameter values are used as initial values for the parameter extraction process using optimization. The entire device equivalent circuit, containing RF probe pad and interconnection circuit parameters extracted by test structures, is optimized to fit measured S parameters for eliminating deembedding errors due to the imperfection of pad and inter-connection test structures. The equivalent circuit determined by this method shows excellent agreement with the measured S parameters from 0.1 to 26.5 GHz.-
dc.description.sponsorshipThe authors gratefully acknowledge the staff of the Advanced Bipolar Technology Research Group at ETRI for PSA bipolar transistor fabrication. They would like to thank H-S. Rhee for help with S parameter measurement, and Dr. Y. S. Ku for his helpful discussions and encouragement.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectRESISTANCES-
dc.subjectBASE-
dc.titleA NEW PARAMETER EXTRACTION TECHNIQUE FOR SMALL-SIGNAL EQUIVALENT-CIRCUIT OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS-
dc.typeArticle-
dc.identifier.wosidA1994NA21300017-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.issue2-
dc.citation.beginningpage233-
dc.citation.endingpage238-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKang, Sang-Won-
dc.contributor.nonIdAuthorLEE, SH-
dc.contributor.nonIdAuthorRYUM, BR-
dc.type.journalArticleArticle-
dc.subject.keywordPlusRESISTANCES-
dc.subject.keywordPlusBASE-
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