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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

High performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node

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Cho, Byung Jinresearcher / Suthram, S / Majhi, P / Sun, G / Kalra, P / Harris, HR / Choi, KJ
Issue Date
2007
Language
ENG
Citation

International Electron Devices Meeting, pp.727 - 730

URI
http://hdl.handle.net/10203/159718
Appears in Collection
EE-Conference Papers(학술회의논문)
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