Effects of Post Annealing on the Properties of Al2O3/HfO/ZnO Thin Film Transistor Depoisted by Atomic Layer Depositon
- Issue Date
- 2009-11-05
- Language
- ENG
- Citation
2009 GJ-NST International Conference on Nano Science and Nano Technology
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
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