DSpace at KOASAS: Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devicesImproved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

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Cho, Byung Jin researcher / Zang, H / Loh, WY / Oh, HJ / Choi, KJ / Nguyen, HS / Lo, GQ

Issue Date: 2007-05-06

Language: ENG

Citation: 211th Electrochemical Society Meeting, pp.0 - 0

URI: http://hdl.handle.net/10203/158273

Appears in Collection: EE-Conference Papers(학술회의논문)

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Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devicesImproved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

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