A new fabrication technique for 2.75 GHz ZnO-based FBAR devices

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Issue Date
2008-02-23
Language
ENG
Citation

17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, v.2

URI
http://hdl.handle.net/10203/157448
Appears in Collection
EE-Conference Papers(학술회의논문)
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