Ku-band MMIC phase shifter using a parallel resonator with 0.18-mu m CMOS technology

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dc.contributor.authorKang, Dong-Wooko
dc.contributor.authorLee, Hui-Dongko
dc.contributor.authorKim, Chung-Hwanko
dc.contributor.authorHong, Song-Cheolko
dc.date.accessioned2007-09-27T13:00:14Z-
dc.date.available2007-09-27T13:00:14Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-01-
dc.identifier.citationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.54, no.1, pp.294 - 301-
dc.identifier.issn0018-9480-
dc.identifier.urihttp://hdl.handle.net/10203/1572-
dc.description.abstractA digital 5-bit phase shifter at Ku-band is presented, which is implemented with 0.18-mu m RFCMOS technology. n-MOSFET switches and top metal microstrip lines with a first-metal ground allow the phase shifter to have small insertion losses. The proposed 90 degrees phase shifter utilizing a parallel resonator exhibits broad-band characteristics. All of the circuit components are derived to obtain a minimum phase variation at the operation frequency band. A bridged-T type phase shifter is also analyzed in view of parallel resonance using an ideal equivalent-circuit model. The conditions of the circuit elements are derived in an analytic form, which are used to obtain the broad-band phase characteristics. The fabricated 5-bit phase shifter demonstrates an overall rms phase error less than. 12 degrees from 9 to 15 GHz. Insertion losses of 14.5 dB +/- 0.5 dB and return losses less than 14 dB are obtained for 32 states at 12 GHz. The proposed 90 degrees phase shifter has performed a phase shift of 92.3 degrees +/- 3.2 degrees over 9-15 GHz.-
dc.description.sponsorshipThis work was supported in part by Teltron Inc. and by the Agency for Defense Development, Korea, through the Radio Detection Research Center, Korea Advanced Institute of Science and Technology.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectSWITCH-
dc.titleKu-band MMIC phase shifter using a parallel resonator with 0.18-mu m CMOS technology-
dc.typeArticle-
dc.identifier.wosid000234657600038-
dc.identifier.scopusid2-s2.0-31044432483-
dc.type.rimsART-
dc.citation.volume54-
dc.citation.issue1-
dc.citation.beginningpage294-
dc.citation.endingpage301-
dc.citation.publicationnameIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.identifier.doi10.1109/TMTT.2005.860298-
dc.contributor.localauthorHong, Song-Cheol-
dc.contributor.nonIdAuthorKang, Dong-Woo-
dc.contributor.nonIdAuthorLee, Hui-Dong-
dc.contributor.nonIdAuthorKim, Chung-Hwan-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS switches-
dc.subject.keywordAuthorphased-array system-
dc.subject.keywordAuthorphase shifter-
dc.subject.keywordAuthorsatellite communications-
dc.subject.keywordPlusSWITCH-
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