Quantum-well infrared phototransistor with pHEMT structure

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A quantum-well infrared phototransistor with a pseudomorphic high-electron mobility transistor (pHEMT) structure is presented. The proposed phototransistor uses four periods of a GaAs/Al0.3Ga0.7As (50 angstrom/120 angstrom) quantum-well absorption region, as well as an In0.15Ga0.85As quantum well conducting channel under the absorption layer. The phototransistor shows a large responsivity of 140 A/W around 6 mu m at 23 K (for a cutoff wavelength of 7.5 mu m). The relation between the photoconductive gain and the transconductance of the pHEMT structure is also investigated.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2005-08
Language
English
Article Type
Article
Keywords

PHOTODETECTOR; DETECTIVITY; DOTS

Citation

IEEE ELECTRON DEVICE LETTERS, v.26, no.8, pp.527 - 529

ISSN
0741-3106
DOI
10.1109/LED.2005.852539
URI
http://hdl.handle.net/10203/1569
Appears in Collection
EE-Journal Papers(저널논문)
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