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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Orientation relationships and atomic arrangements of GaN nanorods grown on Al2O3(0001) substrates by using hydride vapor phase epitaxy

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dc.contributor.authorLee, Jeong Yong-
dc.contributor.authorLee, KJ-
dc.contributor.authorKwon, YH-
dc.contributor.authorRyu, SY-
dc.contributor.authorKang, TW-
dc.contributor.authorYoo, CH-
dc.contributor.authorKim, TW-
dc.date.accessioned2013-03-19T04:14:52Z-
dc.date.available2013-03-19T04:14:52Z-
dc.date.created2012-02-06-
dc.date.issued2008-11-06-
dc.identifier.citation2008 International Conference on Nano Science and Nano Technology, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/155581-
dc.languageENG-
dc.titleOrientation relationships and atomic arrangements of GaN nanorods grown on Al2O3(0001) substrates by using hydride vapor phase epitaxy-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2008 International Conference on Nano Science and Nano Technology-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Jeong Yong-
dc.contributor.nonIdAuthorLee, KJ-
dc.contributor.nonIdAuthorKwon, YH-
dc.contributor.nonIdAuthorRyu, SY-
dc.contributor.nonIdAuthorKang, TW-
dc.contributor.nonIdAuthorYoo, CH-
dc.contributor.nonIdAuthorKim, TW-
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MS-Conference Papers(학술회의논문)
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