DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dalapati, Goutam Kumar | ko |
dc.contributor.author | Tong, Yi | ko |
dc.contributor.author | Loh, Wei Yip | ko |
dc.contributor.author | Mun, Hoe Keat | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2007-09-20T08:49:20Z | - |
dc.date.available | 2007-09-20T08:49:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.90, no.18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1550 | - |
dc.description.abstract | Structural and electrical properties of HfO2 and HfO2/Gd2O3 gate stacks on p-GaAs substrates have been investigated. It has been demonstrated that the presence of thin layer of Gd2O3 between HfO2 and GaAs improves metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. It is also found that HfO2/Gd2O3 stack can reduce the interfacial GaAs-oxide formation, thus reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion significantly improves the electrical properties of the dielectric stacks. (c) 2007 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | PHYSICAL-PROPERTIES | - |
dc.subject | DEPOSITION | - |
dc.subject | OXIDE | - |
dc.subject | METAL | - |
dc.subject | SUBSTRATE | - |
dc.subject | MOSFET | - |
dc.subject | PASSIVATION | - |
dc.subject | TRANSISTOR | - |
dc.subject | FILMS | - |
dc.title | Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs | - |
dc.type | Article | - |
dc.identifier.wosid | 000246210000134 | - |
dc.identifier.scopusid | 2-s2.0-34247873079 | - |
dc.type.rims | ART | - |
dc.citation.volume | 90 | - |
dc.citation.issue | 18 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2732821 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Dalapati, Goutam Kumar | - |
dc.contributor.nonIdAuthor | Tong, Yi | - |
dc.contributor.nonIdAuthor | Loh, Wei Yip | - |
dc.contributor.nonIdAuthor | Mun, Hoe Keat | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHYSICAL-PROPERTIES | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | MOSFET | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | FILMS | - |
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